Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power
Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5·10¹⁴ e/cm². The films were produced using different sputtering powers. It has been shown that electron irradiation creates defect...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2015 |
| Автори: | , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121221 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power / D.V. Myroniuk, A.I. Ievtushenko, G.V. Lashkarev, V.T. Maslyuk, I.I. Timofeeva, V.A. Baturin, O.Yu. Karpenko, V.M. Kuznetsov, M.V. Dranchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 286-291. — Бібліогр.: 25 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862741768142848000 |
|---|---|
| author | Myroniuk, D.V. Ievtushenko, A.I. Lashkarev, G.V. Maslyuk, V.T. Timofeeva, I.I. Baturin, V.A. Karpenko, O.Yu. Kuznetsov, V.M. Dranchuk, M.V. |
| author_facet | Myroniuk, D.V. Ievtushenko, A.I. Lashkarev, G.V. Maslyuk, V.T. Timofeeva, I.I. Baturin, V.A. Karpenko, O.Yu. Kuznetsov, V.M. Dranchuk, M.V. |
| citation_txt | Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power / D.V. Myroniuk, A.I. Ievtushenko, G.V. Lashkarev, V.T. Maslyuk, I.I. Timofeeva, V.A. Baturin, O.Yu. Karpenko, V.M. Kuznetsov, M.V. Dranchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 286-291. — Бібліогр.: 25 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5·10¹⁴ e/cm². The films were produced using different sputtering powers. It has been shown that electron irradiation creates defects that lead to distortions of the crystal lattice, which results in reduced crystallinity of the films. Also, it leads to film heating that results in radiation annealing and relaxation of the lattice.
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| first_indexed | 2025-12-07T20:21:40Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121221 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:21:40Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Myroniuk, D.V. Ievtushenko, A.I. Lashkarev, G.V. Maslyuk, V.T. Timofeeva, I.I. Baturin, V.A. Karpenko, O.Yu. Kuznetsov, V.M. Dranchuk, M.V. 2017-06-13T16:58:47Z 2017-06-13T16:58:47Z 2015 Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power / D.V. Myroniuk, A.I. Ievtushenko, G.V. Lashkarev, V.T. Maslyuk, I.I. Timofeeva, V.A. Baturin, O.Yu. Karpenko, V.M. Kuznetsov, M.V. Dranchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 286-291. — Бібліогр.: 25 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.286 PACS 61.05.cp, 61.80.-x, 77.55.hf, 81.15.Cd https://nasplib.isofts.kiev.ua/handle/123456789/121221 Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5·10¹⁴ e/cm². The films were produced using different sputtering powers. It has been shown that electron irradiation creates defects that lead to distortions of the crystal lattice, which results in reduced crystallinity of the films. Also, it leads to film heating that results in radiation annealing and relaxation of the lattice. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power Article published earlier |
| spellingShingle | Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power Myroniuk, D.V. Ievtushenko, A.I. Lashkarev, G.V. Maslyuk, V.T. Timofeeva, I.I. Baturin, V.A. Karpenko, O.Yu. Kuznetsov, V.M. Dranchuk, M.V. |
| title | Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power |
| title_full | Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power |
| title_fullStr | Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power |
| title_full_unstemmed | Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power |
| title_short | Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power |
| title_sort | effect of electron irradiation on transparent conductive films zno:al deposited at different sputtering power |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121221 |
| work_keys_str_mv | AT myroniukdv effectofelectronirradiationontransparentconductivefilmsznoaldepositedatdifferentsputteringpower AT ievtushenkoai effectofelectronirradiationontransparentconductivefilmsznoaldepositedatdifferentsputteringpower AT lashkarevgv effectofelectronirradiationontransparentconductivefilmsznoaldepositedatdifferentsputteringpower AT maslyukvt effectofelectronirradiationontransparentconductivefilmsznoaldepositedatdifferentsputteringpower AT timofeevaii effectofelectronirradiationontransparentconductivefilmsznoaldepositedatdifferentsputteringpower AT baturinva effectofelectronirradiationontransparentconductivefilmsznoaldepositedatdifferentsputteringpower AT karpenkooyu effectofelectronirradiationontransparentconductivefilmsznoaldepositedatdifferentsputteringpower AT kuznetsovvm effectofelectronirradiationontransparentconductivefilmsznoaldepositedatdifferentsputteringpower AT dranchukmv effectofelectronirradiationontransparentconductivefilmsznoaldepositedatdifferentsputteringpower |