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Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power

Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5·10¹⁴ e/cm². The films were produced using different sputtering powers. It has been shown that electron irradiation creates defect...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2015
Hauptverfasser: Myroniuk, D.V., Ievtushenko, A.I., Lashkarev, G.V., Maslyuk, V.T., Timofeeva, I.I., Baturin, V.A., Karpenko, O.Yu., Kuznetsov, V.M., Dranchuk, M.V.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121221
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power / D.V. Myroniuk, A.I. Ievtushenko, G.V. Lashkarev, V.T. Maslyuk, I.I. Timofeeva, V.A. Baturin, O.Yu. Karpenko, V.M. Kuznetsov, M.V. Dranchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 286-291. — Бібліогр.: 25 назв. — англ.

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