Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-r...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121224 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods / D. Zymierska, J. Auleytner, N. Dmitruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 438-444. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Zymierska, D. Auleytner, J. Dmitruk, N. 2017-06-13T17:00:55Z 2017-06-13T17:00:55Z 2000 Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods / D. Zymierska, J. Auleytner, N. Dmitruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 438-444. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 61.10.Kw, 61.16.Ch, 68.35.Bs, 78.20.Ci, S7.12 https://nasplib.isofts.kiev.ua/handle/123456789/121224 The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-ray grazing incidence reflectivity, atomic force microscopy, scanning tunneling microscopy, optical specular reflection, and profilometric methods were complementary used. The application of these methods allowed to reveal the details of differences in the surface morphology varied with the way of its preparation. We would like to thank Mr. J. Domagala from the Insti-tute of Physics of the Polish Academy of Sciences (War-saw) for cooperation in X-ray experiments as well as Dr. A.A. Marchenko from the Institute of Physics of the Na-tional Academy of Sciences of Ukraine (Kiev) for per-forming STM measurements. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods |
| spellingShingle |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods Zymierska, D. Auleytner, J. Dmitruk, N. |
| title_short |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods |
| title_full |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods |
| title_fullStr |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods |
| title_full_unstemmed |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods |
| title_sort |
investigations of surface morphology and microrelief of gaas single crystals by complementary methods |
| author |
Zymierska, D. Auleytner, J. Dmitruk, N. |
| author_facet |
Zymierska, D. Auleytner, J. Dmitruk, N. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-ray grazing incidence reflectivity, atomic force microscopy, scanning tunneling microscopy, optical specular reflection, and profilometric methods were complementary used. The application of these methods allowed to reveal the details of differences in the surface morphology varied with the way of its preparation.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121224 |
| citation_txt |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods / D. Zymierska, J. Auleytner, N. Dmitruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 438-444. — Бібліогр.: 15 назв. — англ. |
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2025-12-07T15:44:43Z |
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