Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2000
• Hauptverfasser: Zymierska, D., Auleytner, J., Dmitruk, N.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121224
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods / D. Zymierska, J. Auleytner, N. Dmitruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 438-444. — Бібліогр.: 15 назв. — англ.

The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-r...