Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-r...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2000 |
| Main Authors: | Zymierska, D., Auleytner, J., Dmitruk, N. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121224 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods / D. Zymierska, J. Auleytner, N. Dmitruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 438-444. — Бібліогр.: 15 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineSimilar Items
Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface
by: N. L. Dmitruk, et al.
Published: (2015)
by: N. L. Dmitruk, et al.
Published: (2015)
Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface
by: Dmitruk, N.L., et al.
Published: (2015)
by: Dmitruk, N.L., et al.
Published: (2015)
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
by: Karimov, A.V., et al.
Published: (2005)
by: Karimov, A.V., et al.
Published: (2005)
Vacuum method for creation of liquid crystal orienting microrelief
by: Kolomzarov, Yu., et al.
Published: (2003)
by: Kolomzarov, Yu., et al.
Published: (2003)
Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon
by: Datsenko, L.I., et al.
Published: (2001)
by: Datsenko, L.I., et al.
Published: (2001)
Determination of crystallization conditions of Ge/GaAs heterostructures in the scanning LPE method
by: Tsybulenko, V.V., et al.
Published: (2020)
by: Tsybulenko, V.V., et al.
Published: (2020)
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: V. V. Vainberg, et al.
Published: (2013)
by: V. V. Vainberg, et al.
Published: (2013)
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: Vainberg, V.V., et al.
Published: (2013)
by: Vainberg, V.V., et al.
Published: (2013)
Investigation of the process of microrelief structures formation in chromium films based on the method of chemical etching
by: A. V. Pankratova, et al.
Published: (2021)
by: A. V. Pankratova, et al.
Published: (2021)
Investigation of the process of microrelief structures formation in chromium films based on the method of chemical etching
by: Панкратова, А. В., et al.
Published: (2021)
by: Панкратова, А. В., et al.
Published: (2021)
Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features
by: Dmitruk, N.L., et al.
Published: (2005)
by: Dmitruk, N.L., et al.
Published: (2005)
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces
by: Dmitruk, N.L., et al.
Published: (2005)
by: Dmitruk, N.L., et al.
Published: (2005)
Laser-stimulated enhancement of the reflectance of single-crystalline n-GaAs(100)
by: P. O. Hentsar, et al.
Published: (2017)
by: P. O. Hentsar, et al.
Published: (2017)
Laser-stimulated enhancement of the reflectance of single-crystalline n-GaAs(100)
by: P. O. Gentsar, et al.
Published: (2017)
by: P. O. Gentsar, et al.
Published: (2017)
Local plasmons contribution into photocurrent of Au/GaAs surface barrier structure with Au nanoparticles on interface
by: Mamykin, S., et al.
Published: (2009)
by: Mamykin, S., et al.
Published: (2009)
A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
by: Sghaier, H., et al.
Published: (2012)
by: Sghaier, H., et al.
Published: (2012)
GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013)
by: Storozhenko, I. P., et al.
Published: (2013)
IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals
by: Pashayev, A.M., et al.
Published: (2019)
by: Pashayev, A.M., et al.
Published: (2019)
Imperatives of complementary development in agrosphere
by: O. S. Borodina
Published: (2017)
by: O. S. Borodina
Published: (2017)
Construction of a complementary quasiorder
by: Jakubíková-Studenovská, D., et al.
Published: (2018)
by: Jakubíková-Studenovská, D., et al.
Published: (2018)
Influence of ion implantation and annealing on composition and structure of GaAs surface
by: Normuradov, M.T., et al.
Published: (2002)
by: Normuradov, M.T., et al.
Published: (2002)
GaAs диоды Ганна с AlAs-GaAs-AlAs резонансно туннельным катодом
by: Стороженко, И.П., et al.
Published: (2006)
by: Стороженко, И.П., et al.
Published: (2006)
Surface microrelief obtained by composed target deposition for LC molecules alignment
by: Kolomzarov, Yu., et al.
Published: (2006)
by: Kolomzarov, Yu., et al.
Published: (2006)
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
by: Shutov, S.V., et al.
Published: (2007)
by: Shutov, S.V., et al.
Published: (2007)
Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation
by: Arkusha, Yu. V., et al.
Published: (2013)
by: Arkusha, Yu. V., et al.
Published: (2013)
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs
by: Klimovskaya, A.I., et al.
Published: (2002)
by: Klimovskaya, A.I., et al.
Published: (2002)
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
by: Kladko, V.P., et al.
Published: (2000)
by: Kladko, V.P., et al.
Published: (2000)
Bispectrality of the Complementary Bannai-Ito Polynomials
by: Genest, V.X., et al.
Published: (2013)
by: Genest, V.X., et al.
Published: (2013)
Complementary Modules of Weierstrass Canonical Forms
by: Komeda, Jiryo, et al.
Published: (2022)
by: Komeda, Jiryo, et al.
Published: (2022)
Diffraction Control of Optical Discs Microrelief
by: Antonov, E. E., et al.
Published: (2016)
by: Antonov, E. E., et al.
Published: (2016)
Дизайн та дослідження фазових характеристик гетероструктури por-Ga2O3/por-GaAs/mono-GaAs
by: Kovachov, S. S., et al.
Published: (2024)
by: Kovachov, S. S., et al.
Published: (2024)
Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
by: Zhuchenko, Z.Ya., et al.
Published: (1999)
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: S. A. Iliash, et al.
Published: (2016)
by: S. A. Iliash, et al.
Published: (2016)
Temperature dependences of surface magnetoelastic constants of ultrathin Fe/GaAs (001) films
by: Żuberek, R., et al.
Published: (2012)
by: Żuberek, R., et al.
Published: (2012)
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: Iliash, S.A., et al.
Published: (2016)
by: Iliash, S.A., et al.
Published: (2016)
Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: M. M. Vinoslavskii, et al.
Published: (2018)
by: M. M. Vinoslavskii, et al.
Published: (2018)
Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: Vinoslavskii, M.M., et al.
Published: (2018)
by: Vinoslavskii, M.M., et al.
Published: (2018)
Особенности квантовых эффектов в 2D-структурах GaAs/n-InGaAs/GaAs с двойными квантовыми ямами
by: Арапов, Ю.Г., et al.
Published: (2007)
by: Арапов, Ю.Г., et al.
Published: (2007)
Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field
by: Holovatsky, V.A., et al.
Published: (2018)
by: Holovatsky, V.A., et al.
Published: (2018)
Влияние металлического контакта к запорному InxGa1-xAs-GaAs-гетерокатоду на работу GaAs-диодов Ганна
by: Аркуша, Ю.В., et al.
Published: (2004)
by: Аркуша, Ю.В., et al.
Published: (2004)
Similar Items
-
Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface
by: N. L. Dmitruk, et al.
Published: (2015) -
Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface
by: Dmitruk, N.L., et al.
Published: (2015) -
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
by: Karimov, A.V., et al.
Published: (2005) -
Vacuum method for creation of liquid crystal orienting microrelief
by: Kolomzarov, Yu., et al.
Published: (2003) -
Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon
by: Datsenko, L.I., et al.
Published: (2001)