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Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix

Investigated in this paper have been polarization properties of photoluminescence in solid and porous nc-Si−SiOx light emitting structures passivated in HF vapor. These structures were produced by thermal vacuum evaporation of silicon monoxide SiO powder onto polished c-Si substrates. After annealin...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2015
Hauptverfasser:	Michailovska, K.V., Indutnyi, I.Z., Kudryavtsev, O.O., Sopinskyy, M.V., Shepeliavyi, P.E.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/121225
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix / K.V. Michailovska, I.Z. Indutnyi, O.O. Kudryavtsev, M.V. Sopinskyy, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 324-329. — Бібліогр.: 17 назв. — англ.

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