Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals
The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge carrier in donor-acceptor states and, b) transfer of evolved energy by means of C...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121236 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals / B.G. Tagiyev, R.S. Madatov, F.Sh. Aydayev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 261-263. — Бібліогр.: 5 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Tagiyev, B.G. Madatov, R.S. Aydayev, F.Sh. Abbasova, T.M. 2017-06-13T17:14:12Z 2017-06-13T17:14:12Z 2002 Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals / B.G. Tagiyev, R.S. Madatov, F.Sh. Aydayev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 261-263. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 72.80.-r, 78.60.Fi https://nasplib.isofts.kiev.ua/handle/123456789/121236 The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge carrier in donor-acceptor states and, b) transfer of evolved energy by means of Coulomb interaction. The concentration of majority carriers in the current step field (6.26•10¹¹ cm⁻³) and activation energy of impurities (0.14 eV) have been determined using data obtained. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals |
| spellingShingle |
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals Tagiyev, B.G. Madatov, R.S. Aydayev, F.Sh. Abbasova, T.M. |
| title_short |
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals |
| title_full |
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals |
| title_fullStr |
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals |
| title_full_unstemmed |
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals |
| title_sort |
mechanisms of current passage and excitation of electroluminescence in gase:er monocrystals |
| author |
Tagiyev, B.G. Madatov, R.S. Aydayev, F.Sh. Abbasova, T.M. |
| author_facet |
Tagiyev, B.G. Madatov, R.S. Aydayev, F.Sh. Abbasova, T.M. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge carrier in donor-acceptor states and, b) transfer of evolved energy by means of Coulomb interaction. The concentration of majority carriers in the current step field (6.26•10¹¹ cm⁻³) and activation energy of impurities (0.14 eV) have been determined using data obtained.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121236 |
| citation_txt |
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals / B.G. Tagiyev, R.S. Madatov, F.Sh. Aydayev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 261-263. — Бібліогр.: 5 назв. — англ. |
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| first_indexed |
2025-11-30T15:24:44Z |
| last_indexed |
2025-11-30T15:24:44Z |
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