Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2002
• Hauptverfasser: Tagiyev, B.G., Madatov, R.S., Aydayev, F.Sh., Abbasova, T.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121236
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals / B.G. Tagiyev, R.S. Madatov, F.Sh. Aydayev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 261-263. — Бібліогр.: 5 назв. — англ.

The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge carrier in donor-acceptor states and, b) transfer of evolved energy by means of C...