The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films
Structural and thermodynamic properties of IV-IV solid solutions were calculated by molecular dynamics simulation. Biaxial strains are extremely important for the miscibility behavior of alloy films. It was shown the existence of critical thickness for the GexSi₁-x, Ge₁-xSnx, Si₁-xSnx, Si₁-xCx thin...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2002 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121241 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films / V.G. Deibuk, Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 247-253. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862554610732892160 |
|---|---|
| author | Deibuk, V.G. Korolyuk, Yu.G. |
| author_facet | Deibuk, V.G. Korolyuk, Yu.G. |
| citation_txt | The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films / V.G. Deibuk, Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 247-253. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Structural and thermodynamic properties of IV-IV solid solutions were calculated by molecular dynamics simulation. Biaxial strains are extremely important for the miscibility behavior of alloy films. It was shown the existence of critical thickness for the GexSi₁-x, Ge₁-xSnx, Si₁-xSnx, Si₁-xCx thin solid films. The results of the classical molecular dynamic simulations are in good agreement with experimental data and other ab-initio calculations. The effect of layer thickness have great influence on the miscibility gap.
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| first_indexed | 2025-11-25T21:45:00Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121241 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T21:45:00Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Deibuk, V.G. Korolyuk, Yu.G. 2017-06-13T17:29:07Z 2017-06-13T17:29:07Z 2002 The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films / V.G. Deibuk, Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 247-253. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS: 64.75.+g , 65.50.+m , 68.60.Dv https://nasplib.isofts.kiev.ua/handle/123456789/121241 Structural and thermodynamic properties of IV-IV solid solutions were calculated by molecular dynamics simulation. Biaxial strains are extremely important for the miscibility behavior of alloy films. It was shown the existence of critical thickness for the GexSi₁-x, Ge₁-xSnx, Si₁-xSnx, Si₁-xCx thin solid films. The results of the classical molecular dynamic simulations are in good agreement with experimental data and other ab-initio calculations. The effect of layer thickness have great influence on the miscibility gap. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films Article published earlier |
| spellingShingle | The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films Deibuk, V.G. Korolyuk, Yu.G. |
| title | The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films |
| title_full | The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films |
| title_fullStr | The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films |
| title_full_unstemmed | The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films |
| title_short | The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films |
| title_sort | effect of strain on the thermodynamic properties of ge-si, ge-sn, si-sn, si-c thin solid films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121241 |
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