The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2002
• Main Authors: Deibuk, V.G., Korolyuk, Yu.G.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121241
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films / V.G. Deibuk, Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 247-253. — Бібліогр.: 22 назв. — англ.

Structural and thermodynamic properties of IV-IV solid solutions were calculated by molecular dynamics simulation. Biaxial strains are extremely important for the miscibility behavior of alloy films. It was shown the existence of critical thickness for the GexSi₁-x, Ge₁-xSnx, Si₁-xSnx, Si₁-xCx thin...