Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence
CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different parts of heterostructure (inside ZnSe barrier and cap layers, Zn₁-xCdxSe wett...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2002 |
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121242 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence / M.Ya. Valakh, Yu.G. Sadofyev, N.O. Korsunska, G.N. Semenova, V.V. Strelchuk, L.V. Borkovska, M.V. Vuychik, M. Sharibaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 254-257. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121242 |
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dspace |
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Valakh, M.Ya. Sadofyev, Yu.G. Korsunska, N.O. Semenova, G.N. Strelchuk, V.V. Borkovska, L.V. Vuychik, M.V. Sharibaev, M. 2017-06-13T17:29:40Z 2017-06-13T17:29:40Z 2002 Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence / M.Ya. Valakh, Yu.G. Sadofyev, N.O. Korsunska, G.N. Semenova, V.V. Strelchuk, L.V. Borkovska, M.V. Vuychik, M. Sharibaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 254-257. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS: 78.55.Et, 78.67.Hc, 71.55.Gs https://nasplib.isofts.kiev.ua/handle/123456789/121242 CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different parts of heterostructure (inside ZnSe barrier and cap layers, Zn₁-xCdxSe wetting layer and at quantum dot heterointerface) and their localization depends on the preparation regimes and parameters of investigated structures. It is shown that defect level follows the heavy-hole related level. An intense anti-Stokes photoluminescence of quantum dots has been found. Two-step excitation mechanism of the anti-Stokes photoluminescence through the local states of investigated defects localized on the quantum dot interface is proposed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence |
| spellingShingle |
Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence Valakh, M.Ya. Sadofyev, Yu.G. Korsunska, N.O. Semenova, G.N. Strelchuk, V.V. Borkovska, L.V. Vuychik, M.V. Sharibaev, M. |
| title_short |
Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence |
| title_full |
Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence |
| title_fullStr |
Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence |
| title_full_unstemmed |
Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence |
| title_sort |
deep-level defects in cdse/znse qds and giant anti-stokes photoluminescence |
| author |
Valakh, M.Ya. Sadofyev, Yu.G. Korsunska, N.O. Semenova, G.N. Strelchuk, V.V. Borkovska, L.V. Vuychik, M.V. Sharibaev, M. |
| author_facet |
Valakh, M.Ya. Sadofyev, Yu.G. Korsunska, N.O. Semenova, G.N. Strelchuk, V.V. Borkovska, L.V. Vuychik, M.V. Sharibaev, M. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different parts of heterostructure (inside ZnSe barrier and cap layers, Zn₁-xCdxSe wetting layer and at quantum dot heterointerface) and their localization depends on the preparation regimes and parameters of investigated structures. It is shown that defect level follows the heavy-hole related level. An intense anti-Stokes photoluminescence of quantum dots has been found. Two-step excitation mechanism of the anti-Stokes photoluminescence through the local states of investigated defects localized on the quantum dot interface is proposed.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121242 |
| fulltext |
|
| citation_txt |
Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence / M.Ya. Valakh, Yu.G. Sadofyev, N.O. Korsunska, G.N. Semenova, V.V. Strelchuk, L.V. Borkovska, M.V. Vuychik, M. Sharibaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 254-257. — Бібліогр.: 4 назв. — англ. |
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