Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2002
• Main Authors: Valakh, M.Ya., Sadofyev, Yu.G., Korsunska, N.O., Semenova, G.N., Strelchuk, V.V., Borkovska, L.V., Vuychik, M.V., Sharibaev, M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121242
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence / M.Ya. Valakh, Yu.G. Sadofyev, N.O. Korsunska, G.N. Semenova, V.V. Strelchuk, L.V. Borkovska, M.V. Vuychik, M. Sharibaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 254-257. — Бібліогр.: 4 назв. — англ.

CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different parts of heterostructure (inside ZnSe barrier and cap layers, Zn₁-xCdxSe wett...