Seitmuratov, M., Klad'ko, V., Gudymenko, O., Datsenko, L., & Prokopenko, I. (2002). Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Seitmuratov, M.S, V.P Klad'ko, O.I Gudymenko, L.I Datsenko, та I.V Prokopenko. "Effect of Neutron Irradiation and Doping Level on Defect Structure Formation in Gallium Arsenide Crystals." Semiconductor Physics Quantum Electronics & Optoelectronics 2002.
Стиль цитування MLA (8-ме видання)Seitmuratov, M.S, et al. "Effect of Neutron Irradiation and Doping Level on Defect Structure Formation in Gallium Arsenide Crystals." Semiconductor Physics Quantum Electronics & Optoelectronics, 2002.