Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals
Using the technique of diffuse x-ray scattering at the "tails" of diffraction reflection curves, we analyze the effect of irradiation of dislocation GaAs crystals with high-energy neutrons on evolution of radiation clusters as a function of fluence and doping level. The effect of doping le...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2002 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121243 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals / M.S. Seitmuratov, V.P. Klad'ko, O.I. Gudymenko, L.I. Datsenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 258-260. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121243 |
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Seitmuratov, M.S. Klad'ko, V.P. Gudymenko, O.I. Datsenko, L.I. Prokopenko, I.V. 2017-06-13T17:30:10Z 2017-06-13T17:30:10Z 2002 Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals / M.S. Seitmuratov, V.P. Klad'ko, O.I. Gudymenko, L.I. Datsenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 258-260. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 61.66, 61.80 https://nasplib.isofts.kiev.ua/handle/123456789/121243 Using the technique of diffuse x-ray scattering at the "tails" of diffraction reflection curves, we analyze the effect of irradiation of dislocation GaAs crystals with high-energy neutrons on evolution of radiation clusters as a function of fluence and doping level. The effect of doping level on size of the above defects is shown to be considerable at low fluences. We advance a model for disordered regions in an irradiated crystal based on the results of x-ray experiments. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals |
| spellingShingle |
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals Seitmuratov, M.S. Klad'ko, V.P. Gudymenko, O.I. Datsenko, L.I. Prokopenko, I.V. |
| title_short |
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals |
| title_full |
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals |
| title_fullStr |
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals |
| title_full_unstemmed |
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals |
| title_sort |
effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals |
| author |
Seitmuratov, M.S. Klad'ko, V.P. Gudymenko, O.I. Datsenko, L.I. Prokopenko, I.V. |
| author_facet |
Seitmuratov, M.S. Klad'ko, V.P. Gudymenko, O.I. Datsenko, L.I. Prokopenko, I.V. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Using the technique of diffuse x-ray scattering at the "tails" of diffraction reflection curves, we analyze the effect of irradiation of dislocation GaAs crystals with high-energy neutrons on evolution of radiation clusters as a function of fluence and doping level. The effect of doping level on size of the above defects is shown to be considerable at low fluences. We advance a model for disordered regions in an irradiated crystal based on the results of x-ray experiments.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121243 |
| citation_txt |
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals / M.S. Seitmuratov, V.P. Klad'ko, O.I. Gudymenko, L.I. Datsenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 258-260. — Бібліогр.: 10 назв. — англ. |
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2025-12-07T20:25:04Z |
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2025-12-07T20:25:04Z |
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