Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals
Using the technique of diffuse x-ray scattering at the "tails" of diffraction reflection curves, we analyze the effect of irradiation of dislocation GaAs crystals with high-energy neutrons on evolution of radiation clusters as a function of fluence and doping level. The effect of doping le...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2002 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121243 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals / M.S. Seitmuratov, V.P. Klad'ko, O.I. Gudymenko, L.I. Datsenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 258-260. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862742374014255104 |
|---|---|
| author | Seitmuratov, M.S. Klad'ko, V.P. Gudymenko, O.I. Datsenko, L.I. Prokopenko, I.V. |
| author_facet | Seitmuratov, M.S. Klad'ko, V.P. Gudymenko, O.I. Datsenko, L.I. Prokopenko, I.V. |
| citation_txt | Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals / M.S. Seitmuratov, V.P. Klad'ko, O.I. Gudymenko, L.I. Datsenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 258-260. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Using the technique of diffuse x-ray scattering at the "tails" of diffraction reflection curves, we analyze the effect of irradiation of dislocation GaAs crystals with high-energy neutrons on evolution of radiation clusters as a function of fluence and doping level. The effect of doping level on size of the above defects is shown to be considerable at low fluences. We advance a model for disordered regions in an irradiated crystal based on the results of x-ray experiments.
|
| first_indexed | 2025-12-07T20:25:04Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121243 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:25:04Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Seitmuratov, M.S. Klad'ko, V.P. Gudymenko, O.I. Datsenko, L.I. Prokopenko, I.V. 2017-06-13T17:30:10Z 2017-06-13T17:30:10Z 2002 Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals / M.S. Seitmuratov, V.P. Klad'ko, O.I. Gudymenko, L.I. Datsenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 258-260. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 61.66, 61.80 https://nasplib.isofts.kiev.ua/handle/123456789/121243 Using the technique of diffuse x-ray scattering at the "tails" of diffraction reflection curves, we analyze the effect of irradiation of dislocation GaAs crystals with high-energy neutrons on evolution of radiation clusters as a function of fluence and doping level. The effect of doping level on size of the above defects is shown to be considerable at low fluences. We advance a model for disordered regions in an irradiated crystal based on the results of x-ray experiments. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals Article published earlier |
| spellingShingle | Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals Seitmuratov, M.S. Klad'ko, V.P. Gudymenko, O.I. Datsenko, L.I. Prokopenko, I.V. |
| title | Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals |
| title_full | Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals |
| title_fullStr | Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals |
| title_full_unstemmed | Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals |
| title_short | Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals |
| title_sort | effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121243 |
| work_keys_str_mv | AT seitmuratovms effectofneutronirradiationanddopinglevelondefectstructureformationingalliumarsenidecrystals AT kladkovp effectofneutronirradiationanddopinglevelondefectstructureformationingalliumarsenidecrystals AT gudymenkooi effectofneutronirradiationanddopinglevelondefectstructureformationingalliumarsenidecrystals AT datsenkoli effectofneutronirradiationanddopinglevelondefectstructureformationingalliumarsenidecrystals AT prokopenkoiv effectofneutronirradiationanddopinglevelondefectstructureformationingalliumarsenidecrystals |