Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2002
• Hauptverfasser: Seitmuratov, M.S., Klad'ko, V.P., Gudymenko, O.I., Datsenko, L.I., Prokopenko, I.V.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121243
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals / M.S. Seitmuratov, V.P. Klad'ko, O.I. Gudymenko, L.I. Datsenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 258-260. — Бібліогр.: 10 назв. — англ.

Using the technique of diffuse x-ray scattering at the "tails" of diffraction reflection curves, we analyze the effect of irradiation of dislocation GaAs crystals with high-energy neutrons on evolution of radiation clusters as a function of fluence and doping level. The effect of doping le...