Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics
Undoped as well as Li-, Ag-, Cu- and Zn-doped MgxZn₁₋xO ceramics with x = 0–0.20 were sintered at 1000 °C. Defect-related photoluminescence (PL) and PL excitation spectra were measured at room temperature in 400–800 nm and 250–400 nm spectral ranges, accordingly. Two types of PL bands were observed:...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2015 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121244 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 344-348. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862529168318660608 |
|---|---|
| author | Markevich, I.V. Stara, T.R. Bondarenko, V.O. |
| author_facet | Markevich, I.V. Stara, T.R. Bondarenko, V.O. |
| citation_txt | Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 344-348. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Undoped as well as Li-, Ag-, Cu- and Zn-doped MgxZn₁₋xO ceramics with x = 0–0.20 were sintered at 1000 °C. Defect-related photoluminescence (PL) and PL excitation spectra were measured at room temperature in 400–800 nm and 250–400 nm spectral ranges, accordingly. Two types of PL bands were observed: i) the bands, spectral positions of which were not influenced by the Mg content (Cu-related as well as selfactivated orange and red ones); ii) the bands, spectral positions of which exhibited some blueshift with increasing Mg content (Li- and Ag-related and self-activated green ones). It has been shown that used doping gives the possibility to obtain the phosphor with intense visible emission within the blue-yellow spectral range.
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| first_indexed | 2025-11-24T02:25:07Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121244 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T02:25:07Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| spelling | Markevich, I.V. Stara, T.R. Bondarenko, V.O. 2017-06-13T17:43:33Z 2017-06-13T17:43:33Z 2015 Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 344-348. — Бібліогр.: 17 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.344 PACS 81.05.Dz, 81.05.Je https://nasplib.isofts.kiev.ua/handle/123456789/121244 Undoped as well as Li-, Ag-, Cu- and Zn-doped MgxZn₁₋xO ceramics with x = 0–0.20 were sintered at 1000 °C. Defect-related photoluminescence (PL) and PL excitation spectra were measured at room temperature in 400–800 nm and 250–400 nm spectral ranges, accordingly. Two types of PL bands were observed: i) the bands, spectral positions of which were not influenced by the Mg content (Cu-related as well as selfactivated orange and red ones); ii) the bands, spectral positions of which exhibited some blueshift with increasing Mg content (Li- and Ag-related and self-activated green ones). It has been shown that used doping gives the possibility to obtain the phosphor with intense visible emission within the blue-yellow spectral range. This research has been financially supported by National Academy of Sciences of Ukraine (project III-4-11). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics Article published earlier |
| spellingShingle | Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics Markevich, I.V. Stara, T.R. Bondarenko, V.O. |
| title | Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics |
| title_full | Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics |
| title_fullStr | Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics |
| title_full_unstemmed | Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics |
| title_short | Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics |
| title_sort | influence of mg content on defect-related luminescence of undoped and doped wurtzite mgzno ceramics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121244 |
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