Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it

Nanostructures with fullerene C₆₀ were obtained using vacuum sublimation thermal C₆₀ fullerene powder onto unheated substrates made of silicon, mica, silica and coverslip glass. The effect of the structure, composition and mechanical stresses in the films on fundamental absorption, density-of-states...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2015
Автори: Kolyadina, E.Yu., Matveeva, L.A., Neluba, P.L., Venger, E.F.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121245
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it / E.Yu. Kolyadina, L.A. Matveeva, P.L. Neluba, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 349-353. — Бібліогр.: 17 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121245
record_format dspace
spelling Kolyadina, E.Yu.
Matveeva, L.A.
Neluba, P.L.
Venger, E.F.
2017-06-13T17:44:13Z
2017-06-13T17:44:13Z
2015
Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it / E.Yu. Kolyadina, L.A. Matveeva, P.L. Neluba, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 349-353. — Бібліогр.: 17 назв. — англ.
1560-8034
DOI: 10.15407/spqeo18.03.349
PACS 78.40.Ri
https://nasplib.isofts.kiev.ua/handle/123456789/121245
Nanostructures with fullerene C₆₀ were obtained using vacuum sublimation thermal C₆₀ fullerene powder onto unheated substrates made of silicon, mica, silica and coverslip glass. The effect of the structure, composition and mechanical stresses in the films on fundamental absorption, density-of-states tails in them were investigated by Ramаn spectroscopy, atomic force microscopy, light absorption, electroreflectance modulation spectroscopy and measuring the bend of heterosystems. Ascertained in this work has been the origin of variation observed in literature data concerning the width of the band gap Eg between 1.48 to 2.35 eV and the nature of the fundamental absorption edge in solid C₆₀. This variation is related with decomposition of fullerene molecules caused by the increase in temperature of sublimation. It has been found that C₆₀ in the crystalline state is direct band-gap semiconductor with Eg close to 1.6 eV in the singular point X of the Brillouin zone. The electroreflectance spectra of films and heterosystems bending were used to calculate the Eg dependence on the internal mechanical stresses. The respective coefficient value is equal to –2.8 10⁻¹⁰ eV/Pa.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it
spellingShingle Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it
Kolyadina, E.Yu.
Matveeva, L.A.
Neluba, P.L.
Venger, E.F.
title_short Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it
title_full Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it
title_fullStr Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it
title_full_unstemmed Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it
title_sort analysis of the fundamental absorption edge of the films obtained from the c₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it
author Kolyadina, E.Yu.
Matveeva, L.A.
Neluba, P.L.
Venger, E.F.
author_facet Kolyadina, E.Yu.
Matveeva, L.A.
Neluba, P.L.
Venger, E.F.
publishDate 2015
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Nanostructures with fullerene C₆₀ were obtained using vacuum sublimation thermal C₆₀ fullerene powder onto unheated substrates made of silicon, mica, silica and coverslip glass. The effect of the structure, composition and mechanical stresses in the films on fundamental absorption, density-of-states tails in them were investigated by Ramаn spectroscopy, atomic force microscopy, light absorption, electroreflectance modulation spectroscopy and measuring the bend of heterosystems. Ascertained in this work has been the origin of variation observed in literature data concerning the width of the band gap Eg between 1.48 to 2.35 eV and the nature of the fundamental absorption edge in solid C₆₀. This variation is related with decomposition of fullerene molecules caused by the increase in temperature of sublimation. It has been found that C₆₀ in the crystalline state is direct band-gap semiconductor with Eg close to 1.6 eV in the singular point X of the Brillouin zone. The electroreflectance spectra of films and heterosystems bending were used to calculate the Eg dependence on the internal mechanical stresses. The respective coefficient value is equal to –2.8 10⁻¹⁰ eV/Pa.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121245
citation_txt Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it / E.Yu. Kolyadina, L.A. Matveeva, P.L. Neluba, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 349-353. — Бібліогр.: 17 назв. — англ.
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AT nelubapl analysisofthefundamentalabsorptionedgeofthefilmsobtainedfromthec60fullerenemolecularbeaminvacuumandeffectofinternalmechanicalstressesonit
AT vengeref analysisofthefundamentalabsorptionedgeofthefilmsobtainedfromthec60fullerenemolecularbeaminvacuumandeffectofinternalmechanicalstressesonit
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