Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals

Raman scattering in mixed MoS₂/MoSe₂ layer type crystals was investigated in this work. The change of intensities and positions of bands for in-plane E¹₂g and outof-plane A₁g vibrations as functions of the “concentration” inherent to corresponding type layers has been studied. Estimation of interlay...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2015
Main Authors: Yaremko, A.M., Yukhymchuk, V.O., Romanyuk, Yu.A., Virko, S.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121246
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals / A.M. Yaremko, V.O. Yukhymchuk, Yu.A. Romanyuk, S.V. Virko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 354-361. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:Raman scattering in mixed MoS₂/MoSe₂ layer type crystals was investigated in this work. The change of intensities and positions of bands for in-plane E¹₂g and outof-plane A₁g vibrations as functions of the “concentration” inherent to corresponding type layers has been studied. Estimation of interlayer interaction was obtained from comparison of experiment and theory, and effect of this interaction on the frequency of intralayer phonon was studied.
ISSN:1560-8034