Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals

Raman scattering in mixed MoS₂/MoSe₂ layer type crystals was investigated in this work. The change of intensities and positions of bands for in-plane E¹₂g and outof-plane A₁g vibrations as functions of the “concentration” inherent to corresponding type layers has been studied. Estimation of interlay...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2015
Hauptverfasser: Yaremko, A.M., Yukhymchuk, V.O., Romanyuk, Yu.A., Virko, S.V.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121246
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals / A.M. Yaremko, V.O. Yukhymchuk, Yu.A. Romanyuk, S.V. Virko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 354-361. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121246
record_format dspace
spelling Yaremko, A.M.
Yukhymchuk, V.O.
Romanyuk, Yu.A.
Virko, S.V.
2017-06-13T17:45:06Z
2017-06-13T17:45:06Z
2015
Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals / A.M. Yaremko, V.O. Yukhymchuk, Yu.A. Romanyuk, S.V. Virko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 354-361. — Бібліогр.: 20 назв. — англ.
1560-8034
DOI: 10.15407/spqeo18.03.354
PACS 71.36.+c, 78.30.Hv
https://nasplib.isofts.kiev.ua/handle/123456789/121246
Raman scattering in mixed MoS₂/MoSe₂ layer type crystals was investigated in this work. The change of intensities and positions of bands for in-plane E¹₂g and outof-plane A₁g vibrations as functions of the “concentration” inherent to corresponding type layers has been studied. Estimation of interlayer interaction was obtained from comparison of experiment and theory, and effect of this interaction on the frequency of intralayer phonon was studied.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals
spellingShingle Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals
Yaremko, A.M.
Yukhymchuk, V.O.
Romanyuk, Yu.A.
Virko, S.V.
title_short Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals
title_full Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals
title_fullStr Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals
title_full_unstemmed Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals
title_sort theoretical and experimental study of raman scattering in mixed (mos₂)x(mose₂)₁₋x layered crystals
author Yaremko, A.M.
Yukhymchuk, V.O.
Romanyuk, Yu.A.
Virko, S.V.
author_facet Yaremko, A.M.
Yukhymchuk, V.O.
Romanyuk, Yu.A.
Virko, S.V.
publishDate 2015
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Raman scattering in mixed MoS₂/MoSe₂ layer type crystals was investigated in this work. The change of intensities and positions of bands for in-plane E¹₂g and outof-plane A₁g vibrations as functions of the “concentration” inherent to corresponding type layers has been studied. Estimation of interlayer interaction was obtained from comparison of experiment and theory, and effect of this interaction on the frequency of intralayer phonon was studied.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121246
citation_txt Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals / A.M. Yaremko, V.O. Yukhymchuk, Yu.A. Romanyuk, S.V. Virko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 354-361. — Бібліогр.: 20 назв. — англ.
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AT romanyukyua theoreticalandexperimentalstudyoframanscatteringinmixedmos2xmose21xlayeredcrystals
AT virkosv theoreticalandexperimentalstudyoframanscatteringinmixedmos2xmose21xlayeredcrystals
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