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Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals

Raman scattering in mixed MoS₂/MoSe₂ layer type crystals was investigated in this work. The change of intensities and positions of bands for in-plane E¹₂g and outof-plane A₁g vibrations as functions of the “concentration” inherent to corresponding type layers has been studied. Estimation of interlay...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2015
Hauptverfasser: Yaremko, A.M., Yukhymchuk, V.O., Romanyuk, Yu.A., Virko, S.V.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121246
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals / A.M. Yaremko, V.O. Yukhymchuk, Yu.A. Romanyuk, S.V. Virko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 354-361. — Бібліогр.: 20 назв. — англ.

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