Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality

In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. These investigations were founded on the model dispersion law that most co...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2005
Main Author: Tovstyuk, N.K.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121251
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality / N.K. Tovstyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 32-36. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Tovstyuk, N.K.
author_facet Tovstyuk, N.K.
citation_txt Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality / N.K. Tovstyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 32-36. — Бібліогр.: 13 назв. — англ.
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container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. These investigations were founded on the model dispersion law that most completely governs the peculiarities of the structure. Here, we studied the character of alternating oscillations of the potential screened by interelectron interaction, namely, by its anisotropy depending on microscopic parameters that determine the shape of isoenergetic surface and the degree of quasi-two-dimensionality. It is shown that the obtained potential, in comparison with similar results for isotropic Fermi gas, oscillates at smaller distances with amplitude of an order of magnitude higher and with a period of an order of that smaller.
first_indexed 2025-11-26T19:06:46Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-26T19:06:46Z
publishDate 2005
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Tovstyuk, N.K.
2017-06-13T17:49:19Z
2017-06-13T17:49:19Z
2005
Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality / N.K. Tovstyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 32-36. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS: 73.20 Dx, 21.60 Jz
https://nasplib.isofts.kiev.ua/handle/123456789/121251
In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. These investigations were founded on the model dispersion law that most completely governs the peculiarities of the structure. Here, we studied the character of alternating oscillations of the potential screened by interelectron interaction, namely, by its anisotropy depending on microscopic parameters that determine the shape of isoenergetic surface and the degree of quasi-two-dimensionality. It is shown that the obtained potential, in comparison with similar results for isotropic Fermi gas, oscillates at smaller distances with amplitude of an order of magnitude higher and with a period of an order of that smaller.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality
Article
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spellingShingle Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality
Tovstyuk, N.K.
title Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality
title_full Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality
title_fullStr Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality
title_full_unstemmed Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality
title_short Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality
title_sort screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality
url https://nasplib.isofts.kiev.ua/handle/123456789/121251
work_keys_str_mv AT tovstyuknk screeningeffectscausedbyelectronelectroninteractionsincrystalinestructureswithintermediatedimensionality