Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2015
• Автори: Naumov, A.V., Kolomys, O.F., Romanyuk, A.S., Tsykaniuk, B.I., Strelchuk, V.V., Trius, M.P., Avksentyev, A.Yu., Belyaev, A.E.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/121254
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / A.V. Naumov, O.F. Kolomys, A.S. Romanyuk, B.I. Tsykaniuk, V.V. Strelchuk,
 M.P. Trius, A.Yu. Avksentyev, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 396-402. — Бібліогр.: 19 назв. — англ.

The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for temperature estimations for transistor structures under electrical load. The thermal resistance of these structures has been calculated to obtain the temperature of conducting channel heating from the current-voltage characteristics. The differences in the obtained temperature data from applied techniques have been analyzed.