Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for temperature estimations for transistor structures under electrical load. The the...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2015 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121254 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / A.V. Naumov, O.F. Kolomys, A.S. Romanyuk, B.I. Tsykaniuk, V.V. Strelchuk,
 M.P. Trius, A.Yu. Avksentyev, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 396-402. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862699298403123200 |
|---|---|
| author | Naumov, A.V. Kolomys, O.F. Romanyuk, A.S. Tsykaniuk, B.I. Strelchuk, V.V. Trius, M.P. Avksentyev, A.Yu. Belyaev, A.E. |
| author_facet | Naumov, A.V. Kolomys, O.F. Romanyuk, A.S. Tsykaniuk, B.I. Strelchuk, V.V. Trius, M.P. Avksentyev, A.Yu. Belyaev, A.E. |
| citation_txt | Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / A.V. Naumov, O.F. Kolomys, A.S. Romanyuk, B.I. Tsykaniuk, V.V. Strelchuk,
 M.P. Trius, A.Yu. Avksentyev, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 396-402. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for temperature estimations for transistor structures under electrical load. The thermal resistance of these structures has been calculated to obtain the temperature of conducting channel heating from the current-voltage characteristics. The differences in the obtained temperature data from applied techniques have been analyzed.
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| first_indexed | 2025-12-07T16:35:01Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121254 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:35:01Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Naumov, A.V. Kolomys, O.F. Romanyuk, A.S. Tsykaniuk, B.I. Strelchuk, V.V. Trius, M.P. Avksentyev, A.Yu. Belyaev, A.E. 2017-06-13T18:04:31Z 2017-06-13T18:04:31Z 2015 Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / A.V. Naumov, O.F. Kolomys, A.S. Romanyuk, B.I. Tsykaniuk, V.V. Strelchuk,
 M.P. Trius, A.Yu. Avksentyev, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 396-402. — Бібліогр.: 19 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.396 PACS 65.80.-g, 73.40.Kp, 78.30.Fs, 78.55.Cr, 85.30.-z https://nasplib.isofts.kiev.ua/handle/123456789/121254 The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for temperature estimations for transistor structures under electrical load. The thermal resistance of these structures has been calculated to obtain the temperature of conducting channel heating from the current-voltage characteristics. The differences in the obtained temperature data from applied techniques have been analyzed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization Article published earlier |
| spellingShingle | Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization Naumov, A.V. Kolomys, O.F. Romanyuk, A.S. Tsykaniuk, B.I. Strelchuk, V.V. Trius, M.P. Avksentyev, A.Yu. Belyaev, A.E. |
| title | Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization |
| title_full | Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization |
| title_fullStr | Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization |
| title_full_unstemmed | Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization |
| title_short | Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization |
| title_sort | self-heating effects in algan/gan hemt heterostructures: electrical and optical characterization |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121254 |
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