Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for temperature estimations for transistor structures under electrical load. The the...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2015 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121254 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / A.V. Naumov, O.F. Kolomys, A.S. Romanyuk, B.I. Tsykaniuk, V.V. Strelchuk, M.P. Trius, A.Yu. Avksentyev, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 396-402. — Бібліогр.: 19 назв. — англ. |
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Naumov, A.V. Kolomys, O.F. Romanyuk, A.S. Tsykaniuk, B.I. Strelchuk, V.V. Trius, M.P. Avksentyev, A.Yu. Belyaev, A.E. 2017-06-13T18:04:31Z 2017-06-13T18:04:31Z 2015 Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / A.V. Naumov, O.F. Kolomys, A.S. Romanyuk, B.I. Tsykaniuk, V.V. Strelchuk, M.P. Trius, A.Yu. Avksentyev, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 396-402. — Бібліогр.: 19 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.396 PACS 65.80.-g, 73.40.Kp, 78.30.Fs, 78.55.Cr, 85.30.-z https://nasplib.isofts.kiev.ua/handle/123456789/121254 The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for temperature estimations for transistor structures under electrical load. The thermal resistance of these structures has been calculated to obtain the temperature of conducting channel heating from the current-voltage characteristics. The differences in the obtained temperature data from applied techniques have been analyzed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization |
| spellingShingle |
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization Naumov, A.V. Kolomys, O.F. Romanyuk, A.S. Tsykaniuk, B.I. Strelchuk, V.V. Trius, M.P. Avksentyev, A.Yu. Belyaev, A.E. |
| title_short |
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization |
| title_full |
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization |
| title_fullStr |
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization |
| title_full_unstemmed |
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization |
| title_sort |
self-heating effects in algan/gan hemt heterostructures: electrical and optical characterization |
| author |
Naumov, A.V. Kolomys, O.F. Romanyuk, A.S. Tsykaniuk, B.I. Strelchuk, V.V. Trius, M.P. Avksentyev, A.Yu. Belyaev, A.E. |
| author_facet |
Naumov, A.V. Kolomys, O.F. Romanyuk, A.S. Tsykaniuk, B.I. Strelchuk, V.V. Trius, M.P. Avksentyev, A.Yu. Belyaev, A.E. |
| publishDate |
2015 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for temperature estimations for transistor structures under electrical load. The thermal resistance of these structures has been calculated to obtain the temperature of conducting channel heating from the current-voltage characteristics. The differences in the obtained temperature data from applied techniques have been analyzed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121254 |
| citation_txt |
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / A.V. Naumov, O.F. Kolomys, A.S. Romanyuk, B.I. Tsykaniuk, V.V. Strelchuk, M.P. Trius, A.Yu. Avksentyev, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 396-402. — Бібліогр.: 19 назв. — англ. |
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| first_indexed |
2025-12-07T16:35:01Z |
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2025-12-07T16:35:01Z |
| _version_ |
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