Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization

The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for temperature estimations for transistor structures under electrical load. The the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2015
Hauptverfasser: Naumov, A.V., Kolomys, O.F., Romanyuk, A.S., Tsykaniuk, B.I., Strelchuk, V.V., Trius, M.P., Avksentyev, A.Yu., Belyaev, A.E.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121254
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / A.V. Naumov, O.F. Kolomys, A.S. Romanyuk, B.I. Tsykaniuk, V.V. Strelchuk, M.P. Trius, A.Yu. Avksentyev, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 396-402. — Бібліогр.: 19 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121254
record_format dspace
spelling Naumov, A.V.
Kolomys, O.F.
Romanyuk, A.S.
Tsykaniuk, B.I.
Strelchuk, V.V.
Trius, M.P.
Avksentyev, A.Yu.
Belyaev, A.E.
2017-06-13T18:04:31Z
2017-06-13T18:04:31Z
2015
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / A.V. Naumov, O.F. Kolomys, A.S. Romanyuk, B.I. Tsykaniuk, V.V. Strelchuk, M.P. Trius, A.Yu. Avksentyev, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 396-402. — Бібліогр.: 19 назв. — англ.
1560-8034
DOI: 10.15407/spqeo18.04.396
PACS 65.80.-g, 73.40.Kp, 78.30.Fs, 78.55.Cr, 85.30.-z
https://nasplib.isofts.kiev.ua/handle/123456789/121254
The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for temperature estimations for transistor structures under electrical load. The thermal resistance of these structures has been calculated to obtain the temperature of conducting channel heating from the current-voltage characteristics. The differences in the obtained temperature data from applied techniques have been analyzed.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
spellingShingle Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
Naumov, A.V.
Kolomys, O.F.
Romanyuk, A.S.
Tsykaniuk, B.I.
Strelchuk, V.V.
Trius, M.P.
Avksentyev, A.Yu.
Belyaev, A.E.
title_short Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
title_full Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
title_fullStr Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
title_full_unstemmed Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
title_sort self-heating effects in algan/gan hemt heterostructures: electrical and optical characterization
author Naumov, A.V.
Kolomys, O.F.
Romanyuk, A.S.
Tsykaniuk, B.I.
Strelchuk, V.V.
Trius, M.P.
Avksentyev, A.Yu.
Belyaev, A.E.
author_facet Naumov, A.V.
Kolomys, O.F.
Romanyuk, A.S.
Tsykaniuk, B.I.
Strelchuk, V.V.
Trius, M.P.
Avksentyev, A.Yu.
Belyaev, A.E.
publishDate 2015
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for temperature estimations for transistor structures under electrical load. The thermal resistance of these structures has been calculated to obtain the temperature of conducting channel heating from the current-voltage characteristics. The differences in the obtained temperature data from applied techniques have been analyzed.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121254
citation_txt Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / A.V. Naumov, O.F. Kolomys, A.S. Romanyuk, B.I. Tsykaniuk, V.V. Strelchuk, M.P. Trius, A.Yu. Avksentyev, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 396-402. — Бібліогр.: 19 назв. — англ.
work_keys_str_mv AT naumovav selfheatingeffectsinalganganhemtheterostructureselectricalandopticalcharacterization
AT kolomysof selfheatingeffectsinalganganhemtheterostructureselectricalandopticalcharacterization
AT romanyukas selfheatingeffectsinalganganhemtheterostructureselectricalandopticalcharacterization
AT tsykaniukbi selfheatingeffectsinalganganhemtheterostructureselectricalandopticalcharacterization
AT strelchukvv selfheatingeffectsinalganganhemtheterostructureselectricalandopticalcharacterization
AT triusmp selfheatingeffectsinalganganhemtheterostructureselectricalandopticalcharacterization
AT avksentyevayu selfheatingeffectsinalganganhemtheterostructureselectricalandopticalcharacterization
AT belyaevae selfheatingeffectsinalganganhemtheterostructureselectricalandopticalcharacterization
first_indexed 2025-12-07T16:35:01Z
last_indexed 2025-12-07T16:35:01Z
_version_ 1850868028342796288