Thermal annealing and evolution of defects in neutron-irradiated cubic SiC
A careful study of neutron-irradiated cubic SiC crystals (3С-SiC(n)) has been performed using electron paramagnetic resonance (EPR) in the course of their thermal annealing within the 200…1100 °C temperature range. Several inherent temperatures have been found for annealing and transformations of pr...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2015 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121255 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Thermal annealing and evolution of defects in neutron-irradiated cubic SiC / V.Ya. Bratus’, R.S. Melnyk, B.D. Shanina, S.M. Okulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 403-409. — Бібліогр.: 30 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862565227504074752 |
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| author | Bratus, V.Ya. Melnyk, R.S. Shanina, B.D. Okulov, S.M. |
| author_facet | Bratus, V.Ya. Melnyk, R.S. Shanina, B.D. Okulov, S.M. |
| citation_txt | Thermal annealing and evolution of defects in neutron-irradiated cubic SiC / V.Ya. Bratus’, R.S. Melnyk, B.D. Shanina, S.M. Okulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 403-409. — Бібліогр.: 30 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A careful study of neutron-irradiated cubic SiC crystals (3С-SiC(n)) has been performed using electron paramagnetic resonance (EPR) in the course of their thermal annealing within the 200…1100 °C temperature range. Several inherent temperatures have been found for annealing and transformations of primary defects in 3С-SiC(n) among which there are isolated negatively charged silicon vacancy VSi⁻, neutral divacancy (VSi–VC)⁰, negatively charged carbon vacancyantisite pair (VC–CSi)⁻ and neutral carbon (100) split interstitial (CC)C⁰. It has been shown that transformation of VSi⁻ into (VC–CSi)⁻ complex is among the mechanisms of silicon vacancy annealing. As it has been established on the basis of the observed hyperfine structure, the secondary T6 center is characterized by the fourfold silicon coordination and assigned to the spin S = 3/2 carbon vacancy-related pair defect. The symmetry reduction of the (VC–VSi)⁰ center is attributed to local rearrangements in the neighborhood of divacancy, and its intensity variations are assigned to changes of the Fermi-level position. Two defects with similar symmetry and close values of zero-field splitting constants D, which concentrations increase by a factor of ten after annealing at 900 °С, are tentatively attributed to the (100) split interstitial (CC)C⁰ and (NС)С⁰ pairs
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| first_indexed | 2025-11-25T23:52:48Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121255 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T23:52:48Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| spelling | Bratus, V.Ya. Melnyk, R.S. Shanina, B.D. Okulov, S.M. 2017-06-13T18:05:16Z 2017-06-13T18:05:16Z 2015 Thermal annealing and evolution of defects in neutron-irradiated cubic SiC / V.Ya. Bratus’, R.S. Melnyk, B.D. Shanina, S.M. Okulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 403-409. — Бібліогр.: 30 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.403 PACS 61.72.Bb, 61.72.Ji, 61.80.Fe, 61.82.Fk https://nasplib.isofts.kiev.ua/handle/123456789/121255 A careful study of neutron-irradiated cubic SiC crystals (3С-SiC(n)) has been performed using electron paramagnetic resonance (EPR) in the course of their thermal annealing within the 200…1100 °C temperature range. Several inherent temperatures have been found for annealing and transformations of primary defects in 3С-SiC(n) among which there are isolated negatively charged silicon vacancy VSi⁻, neutral divacancy (VSi–VC)⁰, negatively charged carbon vacancyantisite pair (VC–CSi)⁻ and neutral carbon (100) split interstitial (CC)C⁰. It has been shown that transformation of VSi⁻ into (VC–CSi)⁻ complex is among the mechanisms of silicon vacancy annealing. As it has been established on the basis of the observed hyperfine structure, the secondary T6 center is characterized by the fourfold silicon coordination and assigned to the spin S = 3/2 carbon vacancy-related pair defect. The symmetry reduction of the (VC–VSi)⁰ center is attributed to local rearrangements in the neighborhood of divacancy, and its intensity variations are assigned to changes of the Fermi-level position. Two defects with similar symmetry and close values of zero-field splitting constants D, which concentrations increase by a factor of ten after annealing at 900 °С, are tentatively attributed to the (100) split interstitial (CC)C⁰ and (NС)С⁰ pairs The authors are grateful to the Center of Shared Research Equipment of Institute of Magnetism of the National Academy Science of Ukraine for placing at their disposal the EPR spectrometer for some temperature measurements en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Thermal annealing and evolution of defects in neutron-irradiated cubic SiC Article published earlier |
| spellingShingle | Thermal annealing and evolution of defects in neutron-irradiated cubic SiC Bratus, V.Ya. Melnyk, R.S. Shanina, B.D. Okulov, S.M. |
| title | Thermal annealing and evolution of defects in neutron-irradiated cubic SiC |
| title_full | Thermal annealing and evolution of defects in neutron-irradiated cubic SiC |
| title_fullStr | Thermal annealing and evolution of defects in neutron-irradiated cubic SiC |
| title_full_unstemmed | Thermal annealing and evolution of defects in neutron-irradiated cubic SiC |
| title_short | Thermal annealing and evolution of defects in neutron-irradiated cubic SiC |
| title_sort | thermal annealing and evolution of defects in neutron-irradiated cubic sic |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121255 |
| work_keys_str_mv | AT bratusvya thermalannealingandevolutionofdefectsinneutronirradiatedcubicsic AT melnykrs thermalannealingandevolutionofdefectsinneutronirradiatedcubicsic AT shaninabd thermalannealingandevolutionofdefectsinneutronirradiatedcubicsic AT okulovsm thermalannealingandevolutionofdefectsinneutronirradiatedcubicsic |