Thermal annealing and evolution of defects in neutron-irradiated cubic SiC

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2015
• Main Authors: Bratus, V.Ya., Melnyk, R.S., Shanina, B.D., Okulov, S.M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121255
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Thermal annealing and evolution of defects in neutron-irradiated cubic SiC / V.Ya. Bratus’, R.S. Melnyk, B.D. Shanina, S.M. Okulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 403-409. — Бібліогр.: 30 назв. — англ.

A careful study of neutron-irradiated cubic SiC crystals (3С-SiC(n)) has been performed using electron paramagnetic resonance (EPR) in the course of their thermal annealing within the 200…1100 °C temperature range. Several inherent temperatures have been found for annealing and transformations of pr...