Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free va...
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| Date: | 2015 |
|---|---|
| Main Authors: | Belyaev, A.E., Boltovets, N.A., Bobyl, A.B., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Nasyrov, M.U., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121259 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP / A.E. Belyaev, N.A. Boltovets, A.B. Bobyl, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, M.U. Nasyrov, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 391-395. — Бібліогр.: 18 назв. — англ. |
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