Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods

The process of cutting, mechanical and chemical treatment of the undoped and doped ZnSe crystal surface has been studied. The chemical interaction of zinc selenide surface with bromine emerging solutions of H₂O₂ – HBr and H₂O₂ – HBr – organic solvent has been studied. The surface states after chemic...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2015
Main Authors: Stanetska, А.S., Tomashyk, V.N., Stratiychuk, І.B., Tomashyk, Z.F., Kravetskyy, M.Yu., Galkin, S.N.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121267
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods / А.S. Stanetska, V.N. Tomashyk, І.B. Stratiychuk, Z.F. Tomashyk, M.Yu. Kravetskyy, S.N. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 416-421. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Stanetska, А.S.
Tomashyk, V.N.
Stratiychuk, І.B.
Tomashyk, Z.F.
Kravetskyy, M.Yu.
Galkin, S.N.
author_facet Stanetska, А.S.
Tomashyk, V.N.
Stratiychuk, І.B.
Tomashyk, Z.F.
Kravetskyy, M.Yu.
Galkin, S.N.
citation_txt Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods / А.S. Stanetska, V.N. Tomashyk, І.B. Stratiychuk, Z.F. Tomashyk, M.Yu. Kravetskyy, S.N. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 416-421. — Бібліогр.: 16 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The process of cutting, mechanical and chemical treatment of the undoped and doped ZnSe crystal surface has been studied. The chemical interaction of zinc selenide surface with bromine emerging solutions of H₂O₂ – HBr and H₂O₂ – HBr – organic solvent has been studied. The surface states after chemical etching have been investigated using electron, metallographic and atomic force microscopy, and it was shown that the surface state is improved after chemical etching. Etchant selection to develop slow polishing compositions for chemical-mechanical polishing of investigated materials has been made. Efficient methods for washing samples solutions have been developed after different types of ZnSe surface treatment: cutting of the crystal, mechanical surface treatment, chemical removing the surface damaged layer.
first_indexed 2025-12-07T16:12:59Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
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language English
last_indexed 2025-12-07T16:12:59Z
publishDate 2015
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Stanetska, А.S.
Tomashyk, V.N.
Stratiychuk, І.B.
Tomashyk, Z.F.
Kravetskyy, M.Yu.
Galkin, S.N.
2017-06-13T18:27:35Z
2017-06-13T18:27:35Z
2015
Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods / А.S. Stanetska, V.N. Tomashyk, І.B. Stratiychuk, Z.F. Tomashyk, M.Yu. Kravetskyy, S.N. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 416-421. — Бібліогр.: 16 назв. — англ.
1560-8034
DOI: 10.15407/spqeo18.04.416
PACS 81.65.Cf
https://nasplib.isofts.kiev.ua/handle/123456789/121267
The process of cutting, mechanical and chemical treatment of the undoped and doped ZnSe crystal surface has been studied. The chemical interaction of zinc selenide surface with bromine emerging solutions of H₂O₂ – HBr and H₂O₂ – HBr – organic solvent has been studied. The surface states after chemical etching have been investigated using electron, metallographic and atomic force microscopy, and it was shown that the surface state is improved after chemical etching. Etchant selection to develop slow polishing compositions for chemical-mechanical polishing of investigated materials has been made. Efficient methods for washing samples solutions have been developed after different types of ZnSe surface treatment: cutting of the crystal, mechanical surface treatment, chemical removing the surface damaged layer.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
Article
published earlier
spellingShingle Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
Stanetska, А.S.
Tomashyk, V.N.
Stratiychuk, І.B.
Tomashyk, Z.F.
Kravetskyy, M.Yu.
Galkin, S.N.
title Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
title_full Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
title_fullStr Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
title_full_unstemmed Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
title_short Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
title_sort development, optimization and improvement of znse crystal surfaces mechanical and chemical treatment and washing methods
url https://nasplib.isofts.kiev.ua/handle/123456789/121267
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AT tomashykzf developmentoptimizationandimprovementofznsecrystalsurfacesmechanicalandchemicaltreatmentandwashingmethods
AT kravetskyymyu developmentoptimizationandimprovementofznsecrystalsurfacesmechanicalandchemicaltreatmentandwashingmethods
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