Characterization of grain boundaries in CdTe polycrystalline films
CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral (along the film’s surface) conductivity as a function of bias voltage and tempera...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2015 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121269 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Characterization of grain boundaries in CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, V.A. Boiko, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 428-432. — Бібліогр.: 31 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862709085808361472 |
|---|---|
| author | Tetyorkin, V.V. Sukach, A.V. Boiko, V.A. Tkachuk, A.I. |
| author_facet | Tetyorkin, V.V. Sukach, A.V. Boiko, V.A. Tkachuk, A.I. |
| citation_txt | Characterization of grain boundaries in CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, V.A. Boiko, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 428-432. — Бібліогр.: 31 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral (along the film’s surface) conductivity as a function of bias voltage and temperature were measured using appropriate arrangement of contacts. The transverse conductivity exhibits ohmic behavior, whereas the lateral transport of carriers is dominated by potential barriers at the grain boundaries. The carrier concentration in the grains and the potential barrier height have been estimated. The inhomogeneous distribution of deep defects through the grains was found from the photoluminescence measurements.
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| first_indexed | 2025-12-07T17:15:10Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121269 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:15:10Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Tetyorkin, V.V. Sukach, A.V. Boiko, V.A. Tkachuk, A.I. 2017-06-13T18:28:44Z 2017-06-13T18:28:44Z 2015 Characterization of grain boundaries in CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, V.A. Boiko, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 428-432. — Бібліогр.: 31 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.428 PACS 73.40.-c, 73.61.Ga, 78.30.Fs, 78.55.Et https://nasplib.isofts.kiev.ua/handle/123456789/121269 CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral (along the film’s surface) conductivity as a function of bias voltage and temperature were measured using appropriate arrangement of contacts. The transverse conductivity exhibits ohmic behavior, whereas the lateral transport of carriers is dominated by potential barriers at the grain boundaries. The carrier concentration in the grains and the potential barrier height have been estimated. The inhomogeneous distribution of deep defects through the grains was found from the photoluminescence measurements. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Characterization of grain boundaries in CdTe polycrystalline films Article published earlier |
| spellingShingle | Characterization of grain boundaries in CdTe polycrystalline films Tetyorkin, V.V. Sukach, A.V. Boiko, V.A. Tkachuk, A.I. |
| title | Characterization of grain boundaries in CdTe polycrystalline films |
| title_full | Characterization of grain boundaries in CdTe polycrystalline films |
| title_fullStr | Characterization of grain boundaries in CdTe polycrystalline films |
| title_full_unstemmed | Characterization of grain boundaries in CdTe polycrystalline films |
| title_short | Characterization of grain boundaries in CdTe polycrystalline films |
| title_sort | characterization of grain boundaries in cdte polycrystalline films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121269 |
| work_keys_str_mv | AT tetyorkinvv characterizationofgrainboundariesincdtepolycrystallinefilms AT sukachav characterizationofgrainboundariesincdtepolycrystallinefilms AT boikova characterizationofgrainboundariesincdtepolycrystallinefilms AT tkachukai characterizationofgrainboundariesincdtepolycrystallinefilms |