Characterization of grain boundaries in CdTe polycrystalline films

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2015
• Hauptverfasser: Tetyorkin, V.V., Sukach, A.V., Boiko, V.A., Tkachuk, A.I.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121269
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Characterization of grain boundaries in CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, V.A. Boiko, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 428-432. — Бібліогр.: 31 назв. — англ.

CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral (along the film’s surface) conductivity as a function of bias voltage and tempera...