External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals
Influence of plastic deformation and high-temperature annealing (T = 2100 °C, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are inherent to SiC crystals with distortions of the structure related with avail...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2015 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121273 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 448-451. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862731546618757120 |
|---|---|
| author | Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| author_facet | Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| citation_txt | External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 448-451. — Бібліогр.: 28 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Influence of plastic deformation and high-temperature annealing (T = 2100 °C, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are inherent to SiC crystals with distortions of the structure related with availability of packing defects that lead to onedimensional disordering (along the c-axis). They are a most expressed in doped crystals with original growth defects. DL luminescence appears in pure crystals at plastic deformation and in doped crystals at a hydrostatic pressure. It enhances at the high temperature annealing, too.
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| first_indexed | 2025-12-07T19:26:34Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121273 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:26:34Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. 2017-06-13T18:58:56Z 2017-06-13T18:58:56Z 2015 External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 448-451. — Бібліогр.: 28 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.448 PACS 64.70.K-, 77.84.Bw, 81.30.-t https://nasplib.isofts.kiev.ua/handle/123456789/121273 Influence of plastic deformation and high-temperature annealing (T = 2100 °C, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are inherent to SiC crystals with distortions of the structure related with availability of packing defects that lead to onedimensional disordering (along the c-axis). They are a most expressed in doped crystals with original growth defects. DL luminescence appears in pure crystals at plastic deformation and in doped crystals at a hydrostatic pressure. It enhances at the high temperature annealing, too. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals Article published earlier |
| spellingShingle | External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| title | External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals |
| title_full | External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals |
| title_fullStr | External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals |
| title_full_unstemmed | External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals |
| title_short | External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals |
| title_sort | external impacts on sic nanostructures in pure and lightly doped silicon carbide crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121273 |
| work_keys_str_mv | AT vlaskinasi externalimpactsonsicnanostructuresinpureandlightlydopedsiliconcarbidecrystals AT mishinovagn externalimpactsonsicnanostructuresinpureandlightlydopedsiliconcarbidecrystals AT vlaskinvi externalimpactsonsicnanostructuresinpureandlightlydopedsiliconcarbidecrystals AT rodionovve externalimpactsonsicnanostructuresinpureandlightlydopedsiliconcarbidecrystals AT svechnikovgs externalimpactsonsicnanostructuresinpureandlightlydopedsiliconcarbidecrystals |