External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2015
• Hauptverfasser: Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121273
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 448-451. — Бібліогр.: 28 назв. — англ.

Influence of plastic deformation and high-temperature annealing (T = 2100 °C, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are inherent to SiC crystals with distortions of the structure related with avail...