Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that i...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2015 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121274 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 452-455. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862709086691262464 |
|---|---|
| author | Okhrimenko, O.B |
| author_facet | Okhrimenko, O.B |
| citation_txt | Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 452-455. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that is a combination of several processes that are described by various models. Interaction of processes caused by the resonant interaction of microwave radiation with the intrinsic oscillations of dislocations, which can lead to dislocation motion, has been considered. The length of dislocations, for which the condition of the resonant interaction is fulfilled, has been estimated. It has been shown that the combination of the considered processes can lead to appearance of additional centers of light absorption or scattering, which is manifested in the spectra of optical absorption and photoluminescence of the structures wide-gap semiconductor – oxide film
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| first_indexed | 2025-12-07T17:15:10Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121274 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:15:10Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Okhrimenko, O.B 2017-06-13T18:59:27Z 2017-06-13T18:59:27Z 2015 Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 452-455. — Бібліогр.: 13 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.452 PACS 61.72.Ff, 68.35.-p, 78.70.Gq https://nasplib.isofts.kiev.ua/handle/123456789/121274 We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that is a combination of several processes that are described by various models. Interaction of processes caused by the resonant interaction of microwave radiation with the intrinsic oscillations of dislocations, which can lead to dislocation motion, has been considered. The length of dislocations, for which the condition of the resonant interaction is fulfilled, has been estimated. It has been shown that the combination of the considered processes can lead to appearance of additional centers of light absorption or scattering, which is manifested in the spectra of optical absorption and photoluminescence of the structures wide-gap semiconductor – oxide film en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film Article published earlier |
| spellingShingle | Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film Okhrimenko, O.B |
| title | Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_full | Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_fullStr | Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_full_unstemmed | Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_short | Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_sort | phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121274 |
| work_keys_str_mv | AT okhrimenkoob phenomenologicalmodelofathermalinteractionofmicrowaveradiationwiththestructureswidegapsemiconductoroxidefilm |