Influence of nanostructured ITO films on surface recombination processes in silicon solar cells

This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was perfor...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2015
Main Authors: Kostylyov, V.P., Sachenko, A.V., Serba, O.A., Slusar, T.V., Vlasyuk, V.M., Tytarenko, P.O., Chernenko, V.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121277
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121277
record_format dspace
spelling Kostylyov, V.P.
Sachenko, A.V.
Serba, O.A.
Slusar, T.V.
Vlasyuk, V.M.
Tytarenko, P.O.
Chernenko, V.V.
2017-06-13T19:01:02Z
2017-06-13T19:01:02Z
2015
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ.
1560-8034
DOI: 10.15407/spqeo18.04.464
PACS 72.20.Jv, 73.50.Gr, 78.67.-n, 88.40.jj
https://nasplib.isofts.kiev.ua/handle/123456789/121277
This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was performed by silicon dioxide layer or ITO layer. It was found that ITO layer surface passivation with formation of ITO/silicon heterojunction, unlike silicon dioxide layer passivation, leads to a significant reduction of the effective surface recombination velocity. It significantly increases the value of the internal quantum efficiency in the wavelength range from 550 to 1050 nm and, as a result, significantly increases the value of short-circuit current of solar cells.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
spellingShingle Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
Kostylyov, V.P.
Sachenko, A.V.
Serba, O.A.
Slusar, T.V.
Vlasyuk, V.M.
Tytarenko, P.O.
Chernenko, V.V.
title_short Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
title_full Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
title_fullStr Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
title_full_unstemmed Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
title_sort influence of nanostructured ito films on surface recombination processes in silicon solar cells
author Kostylyov, V.P.
Sachenko, A.V.
Serba, O.A.
Slusar, T.V.
Vlasyuk, V.M.
Tytarenko, P.O.
Chernenko, V.V.
author_facet Kostylyov, V.P.
Sachenko, A.V.
Serba, O.A.
Slusar, T.V.
Vlasyuk, V.M.
Tytarenko, P.O.
Chernenko, V.V.
publishDate 2015
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was performed by silicon dioxide layer or ITO layer. It was found that ITO layer surface passivation with formation of ITO/silicon heterojunction, unlike silicon dioxide layer passivation, leads to a significant reduction of the effective surface recombination velocity. It significantly increases the value of the internal quantum efficiency in the wavelength range from 550 to 1050 nm and, as a result, significantly increases the value of short-circuit current of solar cells.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121277
citation_txt Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ.
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