Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was perfor...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2015 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121277 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862614762444029952 |
|---|---|
| author | Kostylyov, V.P. Sachenko, A.V. Serba, O.A. Slusar, T.V. Vlasyuk, V.M. Tytarenko, P.O. Chernenko, V.V. |
| author_facet | Kostylyov, V.P. Sachenko, A.V. Serba, O.A. Slusar, T.V. Vlasyuk, V.M. Tytarenko, P.O. Chernenko, V.V. |
| citation_txt | Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was performed by silicon dioxide layer or ITO layer. It was found that ITO layer surface passivation with formation of ITO/silicon heterojunction, unlike silicon dioxide layer passivation, leads to a significant reduction of the effective surface recombination velocity. It significantly increases the value of the internal quantum efficiency in the wavelength range from 550 to 1050 nm and, as a result, significantly increases the value of short-circuit current of solar cells.
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| first_indexed | 2025-11-29T11:58:05Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121277 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-29T11:58:05Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kostylyov, V.P. Sachenko, A.V. Serba, O.A. Slusar, T.V. Vlasyuk, V.M. Tytarenko, P.O. Chernenko, V.V. 2017-06-13T19:01:02Z 2017-06-13T19:01:02Z 2015 Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.464 PACS 72.20.Jv, 73.50.Gr, 78.67.-n, 88.40.jj https://nasplib.isofts.kiev.ua/handle/123456789/121277 This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was performed by silicon dioxide layer or ITO layer. It was found that ITO layer surface passivation with formation of ITO/silicon heterojunction, unlike silicon dioxide layer passivation, leads to a significant reduction of the effective surface recombination velocity. It significantly increases the value of the internal quantum efficiency in the wavelength range from 550 to 1050 nm and, as a result, significantly increases the value of short-circuit current of solar cells. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of nanostructured ITO films on surface recombination processes in silicon solar cells Article published earlier |
| spellingShingle | Influence of nanostructured ITO films on surface recombination processes in silicon solar cells Kostylyov, V.P. Sachenko, A.V. Serba, O.A. Slusar, T.V. Vlasyuk, V.M. Tytarenko, P.O. Chernenko, V.V. |
| title | Influence of nanostructured ITO films on surface recombination processes in silicon solar cells |
| title_full | Influence of nanostructured ITO films on surface recombination processes in silicon solar cells |
| title_fullStr | Influence of nanostructured ITO films on surface recombination processes in silicon solar cells |
| title_full_unstemmed | Influence of nanostructured ITO films on surface recombination processes in silicon solar cells |
| title_short | Influence of nanostructured ITO films on surface recombination processes in silicon solar cells |
| title_sort | influence of nanostructured ito films on surface recombination processes in silicon solar cells |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121277 |
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