Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was perfor...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2015 |
| Main Authors: | Kostylyov, V.P., Sachenko, A.V., Serba, O.A., Slusar, T.V., Vlasyuk, V.M., Tytarenko, P.O., Chernenko, V.V. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121277 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of nanostructured ITO films on surface recombination processes in silicon solar cells / V.P. Kostylyov, A.V. Sachenko, O.A. Serba, T.V. Slusar, V.M. Vlasyuk, P.O. Tytarenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 464-467. — Бібліогр.: 9 назв. — англ. |
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