Aw, K., & Ibrahim, K. (2002). Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Aw, K.C, und K. Ibrahim. "Characterization of MOS Structure Using Low-k Dielectric Methylsilsesquioxane with Evaporated and Sputtered Aluminium Gate." Semiconductor Physics Quantum Electronics & Optoelectronics 2002.
MLA-Zitierstil (8. Ausg.)Aw, K.C, und K. Ibrahim. "Characterization of MOS Structure Using Low-k Dielectric Methylsilsesquioxane with Evaporated and Sputtered Aluminium Gate." Semiconductor Physics Quantum Electronics & Optoelectronics, 2002.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.