Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate
The organic methylsilsesquioxane (MSQ) demonstrates low dielectric constant value (2.6) and is promising interlayer dielectric material to reduce the capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore is more porous than t...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121295 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate / K.C. Aw, K. Ibrahim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 316-318. — Бібліогр.: 5 назв. — англ. |
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Aw, K.C. Ibrahim, K. 2017-06-13T20:37:26Z 2017-06-13T20:37:26Z 2002 Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate / K.C. Aw, K. Ibrahim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 316-318. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 43.70.Q https://nasplib.isofts.kiev.ua/handle/123456789/121295 The organic methylsilsesquioxane (MSQ) demonstrates low dielectric constant value (2.6) and is promising interlayer dielectric material to reduce the capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore is more porous than the traditional SiO2 film and could pose reliability issues. This paper is aimed to characterize the MOS capacitor (MOSC) structure with evaporated and sputtered aluminium method deposited on top of spin-on MSQ. Electrical characterization using C-V and I-t measurements during bias temperature stress (BTS) were used to understand the effect of evaporated and sputtered Al on MSQ. The results show that MOSC with evaporated aluminium has lower breakdown voltage and has poor reliability as compared to structures with sputtered aluminium. The high temperature required for evaporation compared to sputtering process caused these, which cause defects at the aluminium/MSQ interface. Sputtered aluminium gate structures demonstrate Al+ injection under high positive voltage stress due to ionization at the Al/MSQ interface. The authors would like to thank Dr. Mat Johar and Miss Еe Вee Choo of University Science Malaysia for their help with the CV-meter measurement and clean-room support, respectively. The authors would also like to thank Altera Corporation, Penang for the use of microprobing, НP Semiconductor Parameter Analyser, and Chemical Lab facility. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate |
| spellingShingle |
Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate Aw, K.C. Ibrahim, K. |
| title_short |
Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate |
| title_full |
Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate |
| title_fullStr |
Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate |
| title_full_unstemmed |
Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate |
| title_sort |
characterization of mos structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate |
| author |
Aw, K.C. Ibrahim, K. |
| author_facet |
Aw, K.C. Ibrahim, K. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The organic methylsilsesquioxane (MSQ) demonstrates low dielectric constant value (2.6) and is promising interlayer dielectric material to reduce the capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore is more porous than the traditional SiO2 film and could pose reliability issues. This paper is aimed to characterize the MOS capacitor (MOSC) structure with evaporated and sputtered aluminium method deposited on top of spin-on MSQ. Electrical characterization using C-V and I-t measurements during bias temperature stress (BTS) were used to understand the effect of evaporated and sputtered Al on MSQ. The results show that MOSC with evaporated aluminium has lower breakdown voltage and has poor reliability as compared to structures with sputtered aluminium. The high temperature required for evaporation compared to sputtering process caused these, which cause defects at the aluminium/MSQ interface. Sputtered aluminium gate structures demonstrate Al+ injection under high positive voltage stress due to ionization at the Al/MSQ interface.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121295 |
| citation_txt |
Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate / K.C. Aw, K. Ibrahim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 316-318. — Бібліогр.: 5 назв. — англ. |
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AT awkc characterizationofmosstructureusinglowkdielectricmethylsilsesquioxanewithevaporatedandsputteredaluminiumgate AT ibrahimk characterizationofmosstructureusinglowkdielectricmethylsilsesquioxanewithevaporatedandsputteredaluminiumgate |
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2025-12-07T20:26:08Z |
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2025-12-07T20:26:08Z |
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