Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2002
• Main Authors: Aw, K.C., Ibrahim, K.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121295
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate / K.C. Aw, K. Ibrahim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 316-318. — Бібліогр.: 5 назв. — англ.

The organic methylsilsesquioxane (MSQ) demonstrates low dielectric constant value (2.6) and is promising interlayer dielectric material to reduce the capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore is more porous than t...