Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements
Thin vacuum-evaporated layers of As₄₀S₆₀-xSex composition are investigated using Raman spectroscopy from the viewpoint of thermo- and photostructural transformations in them. These transformations are considered as changes in their network structure including three types of piramidal units AsS₃/₂, A...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121298 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements / A.V. Stronski, M. Vlcek, S.A. Kostyukevych, V.M. Tomchuk, E.V. Kostyukevych, S.V. Svechnikov, A.A. Kudryavtsev, N.L. Moskalenko, A.A. Koptyukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 284-287. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862710588911648768 |
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| author | Stronski, A.V. Vlcek, M. Kostyukevych, S.A. Tomchuk, V.M. Kostyukevych, E.V. Svechnikov, S.V. Kudryavtsev, A.A. Moskalenko, N.L. Koptyukh, A.A. |
| author_facet | Stronski, A.V. Vlcek, M. Kostyukevych, S.A. Tomchuk, V.M. Kostyukevych, E.V. Svechnikov, S.V. Kudryavtsev, A.A. Moskalenko, N.L. Koptyukh, A.A. |
| citation_txt | Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements / A.V. Stronski, M. Vlcek, S.A. Kostyukevych, V.M. Tomchuk, E.V. Kostyukevych, S.V. Svechnikov, A.A. Kudryavtsev, N.L. Moskalenko, A.A. Koptyukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 284-287. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Thin vacuum-evaporated layers of As₄₀S₆₀-xSex composition are investigated using Raman spectroscopy from the viewpoint of thermo- and photostructural transformations in them. These transformations are considered as changes in their network structure including three types of piramidal units AsS₃/₂, AsSe₃/₂ and AsS(Se)₃/₂ as well as As₄S(Se)₄ and S(Se)n fragments in its initial state. Annealing or light exposure result in polymerization of the molecular groups and the decreasing number of homopolar bonds, which is thermodynamically favorable. Characteristics of sensivity to photon and electron exposure were investigated. Diffraction efficiency perfomances of a microrelief fabricated using these layers are presented.
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| first_indexed | 2025-12-07T17:25:38Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121298 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:25:38Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Stronski, A.V. Vlcek, M. Kostyukevych, S.A. Tomchuk, V.M. Kostyukevych, E.V. Svechnikov, S.V. Kudryavtsev, A.A. Moskalenko, N.L. Koptyukh, A.A. 2017-06-13T20:39:28Z 2017-06-13T20:39:28Z 2002 Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements / A.V. Stronski, M. Vlcek, S.A. Kostyukevych, V.M. Tomchuk, E.V. Kostyukevych, S.V. Svechnikov, A.A. Kudryavtsev, N.L. Moskalenko, A.A. Koptyukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 284-287. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 42.40.Eq, 78.30.Ly https://nasplib.isofts.kiev.ua/handle/123456789/121298 Thin vacuum-evaporated layers of As₄₀S₆₀-xSex composition are investigated using Raman spectroscopy from the viewpoint of thermo- and photostructural transformations in them. These transformations are considered as changes in their network structure including three types of piramidal units AsS₃/₂, AsSe₃/₂ and AsS(Se)₃/₂ as well as As₄S(Se)₄ and S(Se)n fragments in its initial state. Annealing or light exposure result in polymerization of the molecular groups and the decreasing number of homopolar bonds, which is thermodynamically favorable. Characteristics of sensivity to photon and electron exposure were investigated. Diffraction efficiency perfomances of a microrelief fabricated using these layers are presented. The authors thank Ministry of Education and Science of Ukraine for financial support and express his gratitude to colleagues from Institute of Semiconductor Physics (NAS of Ukraine), Specialized Enterprizes "Holography" and "Optronics" for their help in carrying out the holographic experiments. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements Article published earlier |
| spellingShingle | Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements Stronski, A.V. Vlcek, M. Kostyukevych, S.A. Tomchuk, V.M. Kostyukevych, E.V. Svechnikov, S.V. Kudryavtsev, A.A. Moskalenko, N.L. Koptyukh, A.A. |
| title | Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements |
| title_full | Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements |
| title_fullStr | Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements |
| title_full_unstemmed | Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements |
| title_short | Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements |
| title_sort | study of non-reversible photostructural transformations in as₄₀s₆₀-xsex layers applied for fabrication of holographic protective elements |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121298 |
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