Investigation of the effect of technological parameters on efficiency of chemical string cutting of semiconductor materials

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2002
• ISSN: 1560-8034
• Hauptverfasser: Kravetsky, M.Yu., Sypko, S.A., Fomin, A.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121332
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Investigation of the effect of technological parameters on efficiency of chemical string cutting of semiconductor materials / M.Yu. Kravetsky, S.A. Sypko, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 328-331. — Бібліогр.: 3 назв. — англ.

On the basis of the balance model for convection-diffusion processes that occur during string chemical cutting (CC) of samples, we derive an analytical expression for the limiting CC rate at maximal use of etching agent. Comparison between the experimental and theoretical dependencies of CC rates fo...