Investigation of the effect of technological parameters on efficiency of chemical string cutting of semiconductor materials

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2002
• Main Authors: Kravetsky, M.Yu., Sypko, S.A., Fomin, A.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121332
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Investigation of the effect of technological parameters on efficiency of chemical string cutting of semiconductor materials / M.Yu. Kravetsky, S.A. Sypko, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 328-331. — Бібліогр.: 3 назв. — англ.

On the basis of the balance model for convection-diffusion processes that occur during string chemical cutting (CC) of samples, we derive an analytical expression for the limiting CC rate at maximal use of etching agent. Comparison between the experimental and theoretical dependencies of CC rates fo...