Balance model for contactless chemo-mechanical polishing of wafers
We developed a physical model for polishing. It makes it possible to determine physico-chemical processes occurring at contactless chemo-mechanical polishing (CMP) of crystal surfaces. A balance equation for diffusion, convection and chemical flows is used to describe processes that are proceeding i...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2002 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121333 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Balance model for contactless chemo-mechanical polishing of wafers / N.N. Grigoriev, M.Yu. Kravetsky, G.A. Paschenko, S.A. Sypko, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 332-336. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862529169965973504 |
|---|---|
| author | Grigoriev, N.N. Kravetsky, M.Yu. Paschenko, G.A. Sypko, S.A. Fomin, A.V. |
| author_facet | Grigoriev, N.N. Kravetsky, M.Yu. Paschenko, G.A. Sypko, S.A. Fomin, A.V. |
| citation_txt | Balance model for contactless chemo-mechanical polishing of wafers / N.N. Grigoriev, M.Yu. Kravetsky, G.A. Paschenko, S.A. Sypko, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 332-336. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We developed a physical model for polishing. It makes it possible to determine physico-chemical processes occurring at contactless chemo-mechanical polishing (CMP) of crystal surfaces. A balance equation for diffusion, convection and chemical flows is used to describe processes that are proceeding in the stationary case. The analytical expressions are obtained that relate polishing rate and surface form for processed material to the physical parameters of the proceeding processes. It was found that macrorelief of the processed surface depends not only on the velocity of polishing plate motion but also on the gap between the processed wafer and polishing plate, as well as active component diffusion in the etching solution. One would expect that, at processing conditions discussed, the surface form is the same for different materials, whatever the active component concentration and chemical reaction constant.
The polishing rate substantially depends on the concentration of the etchant active component, chemical reaction, physical properties of sample material and etching liquid. It is shown that the inverse rate of dissolution is the sum of inverse limiting rates of chemical, diffusion and convection stages of the process. The expressions are obtained that make it possible to optimize technological modes of polishing.
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| first_indexed | 2025-11-24T02:25:12Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121333 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T02:25:12Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Grigoriev, N.N. Kravetsky, M.Yu. Paschenko, G.A. Sypko, S.A. Fomin, A.V. 2017-06-14T07:15:56Z 2017-06-14T07:15:56Z 2002 Balance model for contactless chemo-mechanical polishing of wafers / N.N. Grigoriev, M.Yu. Kravetsky, G.A. Paschenko, S.A. Sypko, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 332-336. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 89.20 https://nasplib.isofts.kiev.ua/handle/123456789/121333 We developed a physical model for polishing. It makes it possible to determine physico-chemical processes occurring at contactless chemo-mechanical polishing (CMP) of crystal surfaces. A balance equation for diffusion, convection and chemical flows is used to describe processes that are proceeding in the stationary case. The analytical expressions are obtained that relate polishing rate and surface form for processed material to the physical parameters of the proceeding processes. It was found that macrorelief of the processed surface depends not only on the velocity of polishing plate motion but also on the gap between the processed wafer and polishing plate, as well as active component diffusion in the etching solution. One would expect that, at processing conditions discussed, the surface form is the same for different materials, whatever the active component concentration and chemical reaction constant.
 The polishing rate substantially depends on the concentration of the etchant active component, chemical reaction, physical properties of sample material and etching liquid. It is shown that the inverse rate of dissolution is the sum of inverse limiting rates of chemical, diffusion and convection stages of the process. The expressions are obtained that make it possible to optimize technological modes of polishing. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Balance model for contactless chemo-mechanical polishing of wafers Article published earlier |
| spellingShingle | Balance model for contactless chemo-mechanical polishing of wafers Grigoriev, N.N. Kravetsky, M.Yu. Paschenko, G.A. Sypko, S.A. Fomin, A.V. |
| title | Balance model for contactless chemo-mechanical polishing of wafers |
| title_full | Balance model for contactless chemo-mechanical polishing of wafers |
| title_fullStr | Balance model for contactless chemo-mechanical polishing of wafers |
| title_full_unstemmed | Balance model for contactless chemo-mechanical polishing of wafers |
| title_short | Balance model for contactless chemo-mechanical polishing of wafers |
| title_sort | balance model for contactless chemo-mechanical polishing of wafers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121333 |
| work_keys_str_mv | AT grigorievnn balancemodelforcontactlesschemomechanicalpolishingofwafers AT kravetskymyu balancemodelforcontactlesschemomechanicalpolishingofwafers AT paschenkoga balancemodelforcontactlesschemomechanicalpolishingofwafers AT sypkosa balancemodelforcontactlesschemomechanicalpolishingofwafers AT fominav balancemodelforcontactlesschemomechanicalpolishingofwafers |