Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures
We investigated the effect of microwave radiation on absorption spectra (in 400-800 nm range) and curvature radius of SiO₂/SiC structures obtained using traditional thermal oxidation in water vapor at the temperature of 1373 К and rapid thermal annealing in dry oxygen at 1273 К. From an analysis of...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121335 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures / Yu.Yu. Bacherikov, R.V. Konakova, E.Yu. Kolyadina, A.N. Kocherov, O.B. Okhrimenko, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 391-394. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | We investigated the effect of microwave radiation on absorption spectra (in 400-800 nm range) and curvature radius of SiO₂/SiC structures obtained using traditional thermal oxidation in water vapor at the temperature of 1373 К and rapid thermal annealing in dry oxygen at 1273 К. From an analysis of the sample optical density and radius of curvature variations with total duration of microwave action, we concluded that the structures obtained using rapid thermal annealing are more stable against microwave action.
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| ISSN: | 1560-8034 |