Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures

We investigated the effect of microwave radiation on absorption spectra (in 400-800 nm range) and curvature radius of SiO₂/SiC structures obtained using traditional thermal oxidation in water vapor at the temperature of 1373 К and rapid thermal annealing in dry oxygen at 1273 К. From an analysis of...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2002
Автори: Bacherikov, Yu.Yu., Konakova, R.V., Kolyadina, E.Yu., Kocherov, A.N., Okhrimenko, O.B., Svetlichnyi, A.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121335
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures / Yu.Yu. Bacherikov, R.V. Konakova, E.Yu. Kolyadina, A.N. Kocherov, O.B. Okhrimenko, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 391-394. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121335
record_format dspace
spelling Bacherikov, Yu.Yu.
Konakova, R.V.
Kolyadina, E.Yu.
Kocherov, A.N.
Okhrimenko, O.B.
Svetlichnyi, A.M.
2017-06-14T07:35:16Z
2017-06-14T07:35:16Z
2002
Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures / Yu.Yu. Bacherikov, R.V. Konakova, E.Yu. Kolyadina, A.N. Kocherov, O.B. Okhrimenko, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 391-394. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS: 78.70.Fy, 78.70.Gq
https://nasplib.isofts.kiev.ua/handle/123456789/121335
We investigated the effect of microwave radiation on absorption spectra (in 400-800 nm range) and curvature radius of SiO₂/SiC structures obtained using traditional thermal oxidation in water vapor at the temperature of 1373 К and rapid thermal annealing in dry oxygen at 1273 К. From an analysis of the sample optical density and radius of curvature variations with total duration of microwave action, we concluded that the structures obtained using rapid thermal annealing are more stable against microwave action.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures
spellingShingle Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures
Bacherikov, Yu.Yu.
Konakova, R.V.
Kolyadina, E.Yu.
Kocherov, A.N.
Okhrimenko, O.B.
Svetlichnyi, A.M.
title_short Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures
title_full Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures
title_fullStr Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures
title_full_unstemmed Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures
title_sort effect of microwave radiation on optical transmission spectra in sio₂/sic structures
author Bacherikov, Yu.Yu.
Konakova, R.V.
Kolyadina, E.Yu.
Kocherov, A.N.
Okhrimenko, O.B.
Svetlichnyi, A.M.
author_facet Bacherikov, Yu.Yu.
Konakova, R.V.
Kolyadina, E.Yu.
Kocherov, A.N.
Okhrimenko, O.B.
Svetlichnyi, A.M.
publishDate 2002
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description We investigated the effect of microwave radiation on absorption spectra (in 400-800 nm range) and curvature radius of SiO₂/SiC structures obtained using traditional thermal oxidation in water vapor at the temperature of 1373 К and rapid thermal annealing in dry oxygen at 1273 К. From an analysis of the sample optical density and radius of curvature variations with total duration of microwave action, we concluded that the structures obtained using rapid thermal annealing are more stable against microwave action.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121335
citation_txt Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures / Yu.Yu. Bacherikov, R.V. Konakova, E.Yu. Kolyadina, A.N. Kocherov, O.B. Okhrimenko, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 391-394. — Бібліогр.: 7 назв. — англ.
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AT kolyadinaeyu effectofmicrowaveradiationonopticaltransmissionspectrainsio2sicstructures
AT kocherovan effectofmicrowaveradiationonopticaltransmissionspectrainsio2sicstructures
AT okhrimenkoob effectofmicrowaveradiationonopticaltransmissionspectrainsio2sicstructures
AT svetlichnyiam effectofmicrowaveradiationonopticaltransmissionspectrainsio2sicstructures
first_indexed 2025-12-07T15:41:16Z
last_indexed 2025-12-07T15:41:16Z
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