Photoelectric properties of metal-porous silicon-silicon planar heterostructures
Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heter...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2002 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121336 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoelectric properties of metal-porous silicon-silicon planar heterostructures / A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 395-397. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862607117326745600 |
|---|---|
| author | Brodovoi, A.V. Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. |
| author_facet | Brodovoi, A.V. Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. |
| citation_txt | Photoelectric properties of metal-porous silicon-silicon planar heterostructures / A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 395-397. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heterostructure at applied voltage biases V > 8-10 V and T = 77 K. The coefficient of multiplying at V = 11 V achieves 60 (dark) and 200 (light), which is close to that of silicon n+-p-i-p+ avalanche photodiodes.
|
| first_indexed | 2025-11-28T15:48:12Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121336 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-28T15:48:12Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Brodovoi, A.V. Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. 2017-06-14T07:35:56Z 2017-06-14T07:35:56Z 2002 Photoelectric properties of metal-porous silicon-silicon planar heterostructures / A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 395-397. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 79.60.Jv https://nasplib.isofts.kiev.ua/handle/123456789/121336 Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heterostructure at applied voltage biases V > 8-10 V and T = 77 K. The coefficient of multiplying at V = 11 V achieves 60 (dark) and 200 (light), which is close to that of silicon n+-p-i-p+ avalanche photodiodes. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoelectric properties of metal-porous silicon-silicon planar heterostructures Article published earlier |
| spellingShingle | Photoelectric properties of metal-porous silicon-silicon planar heterostructures Brodovoi, A.V. Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. |
| title | Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_full | Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_fullStr | Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_full_unstemmed | Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_short | Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_sort | photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121336 |
| work_keys_str_mv | AT brodovoiav photoelectricpropertiesofmetalporoussiliconsiliconplanarheterostructures AT brodovoiva photoelectricpropertiesofmetalporoussiliconsiliconplanarheterostructures AT skryshevskyiva photoelectricpropertiesofmetalporoussiliconsiliconplanarheterostructures AT bunchuksg photoelectricpropertiesofmetalporoussiliconsiliconplanarheterostructures AT khnorozoklm photoelectricpropertiesofmetalporoussiliconsiliconplanarheterostructures |