Photoelectric properties of metal-porous silicon-silicon planar heterostructures
Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heter...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2002 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121336 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoelectric properties of metal-porous silicon-silicon planar heterostructures / A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 395-397. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121336 |
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Brodovoi, A.V. Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. 2017-06-14T07:35:56Z 2017-06-14T07:35:56Z 2002 Photoelectric properties of metal-porous silicon-silicon planar heterostructures / A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 395-397. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 79.60.Jv https://nasplib.isofts.kiev.ua/handle/123456789/121336 Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heterostructure at applied voltage biases V > 8-10 V and T = 77 K. The coefficient of multiplying at V = 11 V achieves 60 (dark) and 200 (light), which is close to that of silicon n+-p-i-p+ avalanche photodiodes. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoelectric properties of metal-porous silicon-silicon planar heterostructures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| spellingShingle |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures Brodovoi, A.V. Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. |
| title_short |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_full |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_fullStr |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_full_unstemmed |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_sort |
photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| author |
Brodovoi, A.V. Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. |
| author_facet |
Brodovoi, A.V. Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heterostructure at applied voltage biases V > 8-10 V and T = 77 K. The coefficient of multiplying at V = 11 V achieves 60 (dark) and 200 (light), which is close to that of silicon n+-p-i-p+ avalanche photodiodes.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121336 |
| citation_txt |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures / A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 395-397. — Бібліогр.: 14 назв. — англ. |
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2025-11-28T15:48:12Z |
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2025-11-28T15:48:12Z |
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