Photoelectric properties of metal-porous silicon-silicon planar heterostructures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2002
• Hauptverfasser: Brodovoi, A.V., Brodovoi, V.A., Skryshevskyi, V.A., Bunchuk, S.G., Khnorozok, L.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121336
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Photoelectric properties of metal-porous silicon-silicon planar heterostructures / A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 395-397. — Бібліогр.: 14 назв. — англ.

Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heter...