High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix
The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic character up-converted photoluminescence signal from CdSe quantum dots. Up-con...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2002 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121339 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix / V.V. Strelchuk, M.Ya. Valakh, M.V. Vuychik, S.V. Ivanov, P.S. Kop'ev, T.V. Shubina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 343-346. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862546734656258048 |
|---|---|
| author | Strelchuk, V.V. Valakh, M.Ya. Vuychik, M.V. Ivanov, S.V. Kop'ev, P.S. Shubina, T.V. |
| author_facet | Strelchuk, V.V. Valakh, M.Ya. Vuychik, M.V. Ivanov, S.V. Kop'ev, P.S. Shubina, T.V. |
| citation_txt | High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix / V.V. Strelchuk, M.Ya. Valakh, M.V. Vuychik, S.V. Ivanov, P.S. Kop'ev, T.V. Shubina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 343-346. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic character up-converted photoluminescence signal from CdSe quantum dots. Up-conversion photoluminescence mechanism was interpreted on the basis of a non-linear process of two-step two-photon absorption through deep defect states including cation vacancies localized at the interface of quantum dots. This observation of photoluminescence up-conversion demonstrates the influence of quantum dot environment on its properties.
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| first_indexed | 2025-11-25T12:24:33Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121339 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T12:24:33Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Strelchuk, V.V. Valakh, M.Ya. Vuychik, M.V. Ivanov, S.V. Kop'ev, P.S. Shubina, T.V. 2017-06-14T07:37:47Z 2017-06-14T07:37:47Z 2002 High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix / V.V. Strelchuk, M.Ya. Valakh, M.V. Vuychik, S.V. Ivanov, P.S. Kop'ev, T.V. Shubina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 343-346. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 78.55.Et, 78.66.Hf, 68.66.Hb https://nasplib.isofts.kiev.ua/handle/123456789/121339 The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic character up-converted photoluminescence signal from CdSe quantum dots. Up-conversion photoluminescence mechanism was interpreted on the basis of a non-linear process of two-step two-photon absorption through deep defect states including cation vacancies localized at the interface of quantum dots. This observation of photoluminescence up-conversion demonstrates the influence of quantum dot environment on its properties. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix Article published earlier |
| spellingShingle | High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix Strelchuk, V.V. Valakh, M.Ya. Vuychik, M.V. Ivanov, S.V. Kop'ev, P.S. Shubina, T.V. |
| title | High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix |
| title_full | High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix |
| title_fullStr | High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix |
| title_full_unstemmed | High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix |
| title_short | High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix |
| title_sort | high-efficient up-conversion of photoluminescence in cdse quantum dots grown in znse matrix |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121339 |
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