High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2002
• Main Authors: Strelchuk, V.V., Valakh, M.Ya., Vuychik, M.V., Ivanov, S.V., Kop'ev, P.S., Shubina, T.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121339
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix / V.V. Strelchuk, M.Ya. Valakh, M.V. Vuychik, S.V. Ivanov, P.S. Kop'ev, T.V. Shubina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 343-346. — Бібліогр.: 13 назв. — англ.

The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic character up-converted photoluminescence signal from CdSe quantum dots. Up-con...