Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors
Expressions for line intensities in the near-band-edge luminescence spectrum of semiconductors containing both isolated and bound shallow acceptors and donors are given. Found are the conditions when isolated and bound shallow acceptors and donors make rather small or dominating contributions into t...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2002 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121341 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors / K.D. Glinchuk, A.V. Prokhorovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 353-361. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862531501548109824 |
|---|---|
| author | Glinchuk, K.D. Prokhorovich, A.V. |
| author_facet | Glinchuk, K.D. Prokhorovich, A.V. |
| citation_txt | Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors / K.D. Glinchuk, A.V. Prokhorovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 353-361. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Expressions for line intensities in the near-band-edge luminescence spectrum of semiconductors containing both isolated and bound shallow acceptors and donors are given. Found are the conditions when isolated and bound shallow acceptors and donors make rather small or dominating contributions into the near-band-edge luminescence spectrum. It is shown (on the basis of an analysis of the near-band-edge luminescence spectrum of semi-insulating GaAs) that it is very probable for intensities of the near-band-edge luminescence lines to be determined by different states (isolated or bound) of shallow acceptors and donors in semiconductors of this type.
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| first_indexed | 2025-11-24T04:21:50Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121341 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T04:21:50Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Glinchuk, K.D. Prokhorovich, A.V. 2017-06-14T07:39:26Z 2017-06-14T07:39:26Z 2002 Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors / K.D. Glinchuk, A.V. Prokhorovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 353-361. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 71.55.E, 78.55.E https://nasplib.isofts.kiev.ua/handle/123456789/121341 Expressions for line intensities in the near-band-edge luminescence spectrum of semiconductors containing both isolated and bound shallow acceptors and donors are given. Found are the conditions when isolated and bound shallow acceptors and donors make rather small or dominating contributions into the near-band-edge luminescence spectrum. It is shown (on the basis of an analysis of the near-band-edge luminescence spectrum of semi-insulating GaAs) that it is very probable for intensities of the near-band-edge luminescence lines to be determined by different states (isolated or bound) of shallow acceptors and donors in semiconductors of this type. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors Article published earlier |
| spellingShingle | Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors Glinchuk, K.D. Prokhorovich, A.V. |
| title | Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors |
| title_full | Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors |
| title_fullStr | Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors |
| title_full_unstemmed | Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors |
| title_short | Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors |
| title_sort | analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121341 |
| work_keys_str_mv | AT glinchukkd analysisofthenearbandedgeluminescenceofsemiconductorscontainingisolatedandboundshallowacceptorsanddonors AT prokhorovichav analysisofthenearbandedgeluminescenceofsemiconductorscontainingisolatedandboundshallowacceptorsanddonors |