Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2002
• Hauptverfasser: Glinchuk, K.D., Prokhorovich, A.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121341
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors / K.D. Glinchuk, A.V. Prokhorovich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 353-361. — Бібліогр.: 6 назв. — англ.

Expressions for line intensities in the near-band-edge luminescence spectrum of semiconductors containing both isolated and bound shallow acceptors and donors are given. Found are the conditions when isolated and bound shallow acceptors and donors make rather small or dominating contributions into t...