Temperature dependences of SnTe linear expansion coefficient
The influence of kinetic factors on the temperature dependences of the linear expansion coefficient (a) for SnTe crystals with different degrees of deviation from stoichiometry was studied. The a(T) dependences were obtained by using stationary and dynamic regimes. In the case of the stationary regi...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121343 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Temperature dependences of SnTe linear expansion coefficient / E.I. Rogacheva, V.P. Popov, O.N. Nashchekina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 373-377. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862559055752462336 |
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| author | Rogacheva, E.I. Popov, V.P. Nashchekina, O.N. |
| author_facet | Rogacheva, E.I. Popov, V.P. Nashchekina, O.N. |
| citation_txt | Temperature dependences of SnTe linear expansion coefficient / E.I. Rogacheva, V.P. Popov, O.N. Nashchekina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 373-377. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The influence of kinetic factors on the temperature dependences of the linear expansion coefficient (a) for SnTe crystals with different degrees of deviation from stoichiometry was studied. The a(T) dependences were obtained by using stationary and dynamic regimes. In the case of the stationary regime, an increase in with increasing temperature (4.2-300 K) was registered, and anomalies in the a(T) dependences were observed and attributed to phase transitions. After quick plunging into liquid nitrogen and subsequent heating the samples up to 300 K without keeping them for a long time at fixed temperatures (a dynamic regime), the a(T) dependences exhibited an oscillatory behavior, most pronounced in the sample with 50.4 at.% Te. It is suggested that the observed behavior of the a(T) dependences is connected with an oscillatory process of approaching the equilibrium in the intrinsic defect subsystem and with overlapping of relaxation processes and temperature phase transitions.
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| first_indexed | 2025-11-25T22:46:33Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121343 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T22:46:33Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Rogacheva, E.I. Popov, V.P. Nashchekina, O.N. 2017-06-14T07:40:35Z 2017-06-14T07:40:35Z 2002 Temperature dependences of SnTe linear expansion coefficient / E.I. Rogacheva, V.P. Popov, O.N. Nashchekina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 373-377. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 65.40.De https://nasplib.isofts.kiev.ua/handle/123456789/121343 The influence of kinetic factors on the temperature dependences of the linear expansion coefficient (a) for SnTe crystals with different degrees of deviation from stoichiometry was studied. The a(T) dependences were obtained by using stationary and dynamic regimes. In the case of the stationary regime, an increase in with increasing temperature (4.2-300 K) was registered, and anomalies in the a(T) dependences were observed and attributed to phase transitions. After quick plunging into liquid nitrogen and subsequent heating the samples up to 300 K without keeping them for a long time at fixed temperatures (a dynamic regime), the a(T) dependences exhibited an oscillatory behavior, most pronounced in the sample with 50.4 at.% Te. It is suggested that the observed behavior of the a(T) dependences is connected with an oscillatory process of approaching the equilibrium in the intrinsic defect subsystem and with overlapping of relaxation processes and temperature phase transitions. This work was supported bу the Ministrу of Education and Science of Ukraine en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Temperature dependences of SnTe linear expansion coefficient Article published earlier |
| spellingShingle | Temperature dependences of SnTe linear expansion coefficient Rogacheva, E.I. Popov, V.P. Nashchekina, O.N. |
| title | Temperature dependences of SnTe linear expansion coefficient |
| title_full | Temperature dependences of SnTe linear expansion coefficient |
| title_fullStr | Temperature dependences of SnTe linear expansion coefficient |
| title_full_unstemmed | Temperature dependences of SnTe linear expansion coefficient |
| title_short | Temperature dependences of SnTe linear expansion coefficient |
| title_sort | temperature dependences of snte linear expansion coefficient |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121343 |
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