Method of low-temperature rise of laser diode quality
In 1987 the authors of this article discovered the effect of irreversible gigantic modification (IGM) of semiconductors. Basing on the IGM phenomenon the authors have developed technological method that enables to considerably improve performances of laser diodes after their manufacturing by increas...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2002 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121344 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Method of low-temperature rise of laser diode quality / A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 406-411. — Бібліогр.: 4 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121344 |
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Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. 2017-06-14T07:41:08Z 2017-06-14T07:41:08Z 2002 Method of low-temperature rise of laser diode quality / A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 406-411. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS: 42.55.Px, 85.60.Jb https://nasplib.isofts.kiev.ua/handle/123456789/121344 In 1987 the authors of this article discovered the effect of irreversible gigantic modification (IGM) of semiconductors. Basing on the IGM phenomenon the authors have developed technological method that enables to considerably improve performances of laser diodes after their manufacturing by increasing power, slope efficiency, and decreasing threshold current. The technology has been tested on the laser diodes of several US companies. We obtained the same results in improvement of all the diodes from these companies. Performances of the laser diodes with small slope efficiency and high threshold current were improved using this modification. Slope efficiency of laser diodes was increased by 2.3 or 3.7 times and the threshold current was decreased from 15 % up to 29 %. It is shown that modification depth of the semiconductor chip for these laser diodes exceeds 50 microns. Shown is that a beam divergence of laser diode can be decreased using the irreversible gigantic modification. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Method of low-temperature rise of laser diode quality Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Method of low-temperature rise of laser diode quality |
| spellingShingle |
Method of low-temperature rise of laser diode quality Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. |
| title_short |
Method of low-temperature rise of laser diode quality |
| title_full |
Method of low-temperature rise of laser diode quality |
| title_fullStr |
Method of low-temperature rise of laser diode quality |
| title_full_unstemmed |
Method of low-temperature rise of laser diode quality |
| title_sort |
method of low-temperature rise of laser diode quality |
| author |
Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. |
| author_facet |
Kamuz, A.M. Oleksenko, P.Ph. Kamuz, O.A. Kamuz, V.G. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
In 1987 the authors of this article discovered the effect of irreversible gigantic modification (IGM) of semiconductors. Basing on the IGM phenomenon the authors have developed technological method that enables to considerably improve performances of laser diodes after their manufacturing by increasing power, slope efficiency, and decreasing threshold current. The technology has been tested on the laser diodes of several US companies. We obtained the same results in improvement of all the diodes from these companies. Performances of the laser diodes with small slope efficiency and high threshold current were improved using this modification. Slope efficiency of laser diodes was increased by 2.3 or 3.7 times and the threshold current was decreased from 15 % up to 29 %. It is shown that modification depth of the semiconductor chip for these laser diodes exceeds 50 microns. Shown is that a beam divergence of laser diode can be decreased using the irreversible gigantic modification.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121344 |
| citation_txt |
Method of low-temperature rise of laser diode quality / A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 406-411. — Бібліогр.: 4 назв. — англ. |
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2025-11-28T15:48:29Z |
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