Growth conditions influence on thermally stimulated luminescence of sapphire single crystals
The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying composition and pressure are presented. This technique has an advantage of minimi...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
| Hauptverfasser: | , , , , , , , |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121349 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Growth conditions influence on thermally stimulated luminescence of sapphire single crystals / I.V. Blonskyy, A.Yu. Vakhnin, A.Ya. Danko, A.K. Kadashchuk, V.N. Kadan, N.S. Sidelnikova, V.M. Puzikov, Yu.A. Skryshevskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 420-424. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862528771491364864 |
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| author | Blonskyy, I.V. Vakhnin, A.Yu. Danko, A.Ya. Kadashchuk, A.K. Kadan, V.N. Sidelnikova, N.S. Puzikov, V.M. Skryshevskii, Yu.A. |
| author_facet | Blonskyy, I.V. Vakhnin, A.Yu. Danko, A.Ya. Kadashchuk, A.K. Kadan, V.N. Sidelnikova, N.S. Puzikov, V.M. Skryshevskii, Yu.A. |
| citation_txt | Growth conditions influence on thermally stimulated luminescence of sapphire single crystals / I.V. Blonskyy, A.Yu. Vakhnin, A.Ya. Danko, A.K. Kadashchuk, V.N. Kadan, N.S. Sidelnikova, V.M. Puzikov, Yu.A. Skryshevskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 420-424. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying composition and pressure are presented. This technique has an advantage of minimization of W and Mo erosion, thus providing a considerably reduced prime cost. At the same time, there are some problems connected with emergence of considerable number of anion vacancies, whose in-axis concentration gradient is directed oppositely to that of dopants (mainly Ti). The correlations are found between the conditions of -sapphire growing and the data of absorption and luminescent spectroscopy. An interaction between the anion vacancies and Ti dopants, which induces a transition from electric-charge state Ti⁴+ to Ti³+, is discussed.
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| first_indexed | 2025-11-24T02:25:15Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121349 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-24T02:25:15Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Blonskyy, I.V. Vakhnin, A.Yu. Danko, A.Ya. Kadashchuk, A.K. Kadan, V.N. Sidelnikova, N.S. Puzikov, V.M. Skryshevskii, Yu.A. 2017-06-14T07:46:37Z 2017-06-14T07:46:37Z 2002 Growth conditions influence on thermally stimulated luminescence of sapphire single crystals / I.V. Blonskyy, A.Yu. Vakhnin, A.Ya. Danko, A.K. Kadashchuk, V.N. Kadan, N.S. Sidelnikova, V.M. Puzikov, Yu.A. Skryshevskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 420-424. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 78.60.Kn, 78.55.Hx, 42.70.Hj, 71.55.Ht https://nasplib.isofts.kiev.ua/handle/123456789/121349 The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying composition and pressure are presented. This technique has an advantage of minimization of W and Mo erosion, thus providing a considerably reduced prime cost. At the same time, there are some problems connected with emergence of considerable number of anion vacancies, whose in-axis concentration gradient is directed oppositely to that of dopants (mainly Ti). The correlations are found between the conditions of -sapphire growing and the data of absorption and luminescent spectroscopy. An interaction between the anion vacancies and Ti dopants, which induces a transition from electric-charge state Ti⁴+ to Ti³+, is discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Growth conditions influence on thermally stimulated luminescence of sapphire single crystals Article published earlier |
| spellingShingle | Growth conditions influence on thermally stimulated luminescence of sapphire single crystals Blonskyy, I.V. Vakhnin, A.Yu. Danko, A.Ya. Kadashchuk, A.K. Kadan, V.N. Sidelnikova, N.S. Puzikov, V.M. Skryshevskii, Yu.A. |
| title | Growth conditions influence on thermally stimulated luminescence of sapphire single crystals |
| title_full | Growth conditions influence on thermally stimulated luminescence of sapphire single crystals |
| title_fullStr | Growth conditions influence on thermally stimulated luminescence of sapphire single crystals |
| title_full_unstemmed | Growth conditions influence on thermally stimulated luminescence of sapphire single crystals |
| title_short | Growth conditions influence on thermally stimulated luminescence of sapphire single crystals |
| title_sort | growth conditions influence on thermally stimulated luminescence of sapphire single crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121349 |
| work_keys_str_mv | AT blonskyyiv growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT vakhninayu growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT dankoaya growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT kadashchukak growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT kadanvn growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT sidelnikovans growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT puzikovvm growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT skryshevskiiyua growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals |